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The optical linewidth of InGaN light emitting diodes.
(1997) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 50(1-3). p.285-288 -
Influence of buffer layer and processing on the dark current of 2.5 mu m-wavelength 2%-mismatched InGaAs photodetectors.
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Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire.
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MOVPE growth optimization of high quality InGaN films.
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Integrated optical elliptic couplers: Modeling, design, and applications.
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Low-crosstalk and low-loss waveguide crossings on InP with small dimensions.
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Optical linewidths of InGaN light emitting diodes and epilayers.
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Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a multiwafer vertical rotating susceptor MOVPE reactor.
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Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth.
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Growth and characterization of InAlGaAs(P)/InGaAs(P) MQW structures.