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- Journal Article
- A1
- open access
Determination of majority carrier capture rates via deep level transient spectroscopy
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- Journal Article
- A1
- open access
Selective silicate-directed motility in diatoms
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Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H
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- Journal Article
- A1
- open access
Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers
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Defect engineering for shallow n-type junctions in germanium : facts and fiction
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TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs
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- Journal Article
- A1
- open access
Electronic properties of manganese impurities in germanium
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- Journal Article
- A1
- open access
Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices
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Defect assessment and leakage control in Ge junctions
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Phase formation in intermixed Ni-Ge thin films: influence of Ge content and low-temperature nucleation of hexagonal nickel germanides