Show
Sort by
-
Deposited amorphous silicon-on-insulator technology for nano-photonic integrated circuits
-
ALD of ruthenium at 100°C using the ToRuS-precursor
-
- Conference Paper
- C3
- open access
ALD of ruthenium at 100°C using the ToRuS-precursor
-
Crystallization and semiconductor-metal switching behavior of thin VO₂ layers grown by atomic layer deposition
-
Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
-
- Conference Paper
- C3
- open access
Low temperature plasma-enhanced ALD of vanadium nitride as copper diffusion barrier
-
- Conference Paper
- C3
- open access
Plasma-enhanced atomic layer deposition of thin vanadium nitride layers as a copper diffusion barrier
-
- Conference Paper
- C3
- open access
Optimization of the annealing conditions for thin VO2 ALD films
-
- Conference Paper
- C3
- open access
Semiconductor-metal transition in thin VO2 films deposited by ozone based atomic layer deposition
-
Germanium surface passivation and atomic layer deposition of high-k dielectrics: a tutorial review on Ge-based MOS capacitors