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Material optimisation for AlGaN/GaN HFET applications.
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Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures.
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Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry.
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Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.
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Indium segregation in InGaN quantum-well structures.
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Lateral epitaxial overgrowth for GaN-based LEDs
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GaN pendeo-epitaxy.
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Microstructure and compositional behaviour of InGaN/GaN multiple quantum well structures.
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Influence of growth temperature on electrical characteristics of Silicon doped GaN grown by LP-MOVPE.
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Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD.