Ghent University Academic Bibliography

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Your filters: cql: author="Demeulemeester, J*" or (type exact bookEditor and editor="Demeulemeester, J*")

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Ion beam modification of the Ni-Si solid-phase reaction : the influence of substrate damage and nitrogen impurities introduced by ion implantation

K. van Stiphout, Filip Geenen (UGent) , N. M. Santos, S. M. C. Miranda, V. Joly, J. Demeulemeester, C. Mocuta, C. M. Comrie, Christophe Detavernier (UGent) , L. M. C. Pereira, et al.

(2021) JOURNAL OF PHYSICS D-APPLIED PHYSICS. 54(1).
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- Journal Article
- A1
- open access
Pan-cancer analysis of whole genomes

Peter J. Campbell, Gad Getz, Jan O. Korbel, Joshua M. Stuart, Jennifer L. Jennings, Lincoln D. Stein, Marc D. Perry, Hardeep K. Nahal-Bose, B. F. Francis Ouellette, Constance H. Li, et al.

(2020) NATURE. 578(7793). p.82-93
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Impurity-enhanced solid-state amorphization : the Ni-Si thin film reaction altered by nitrogen

Koen van Stiphout, Filip Geenen (UGent) , Nuno M Santos, Sergio MC Miranda, Vincent Joly, J Demeulemeester, Christophe Detavernier (UGent) , Felipe Kremer, Lino MC Pereira, Kristiaan Temst, et al.

(2019) JOURNAL OF PHYSICS D-APPLIED PHYSICS. 52(14).
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LEDGF/p75 is dispensable for hematopoiesis but essential for MLL-rearranged leukemogenesis

Sara El Ashkar, Juerg Schwaller, Tim Pieters (UGent) , Steven Goossens (UGent) , Jonas Demeulemeester, Frauke Christ, Siska Van Belle, Sabine Juge, Nancy Boeckx, Alan Engelman, et al.

(2018) BLOOD. 131(1). p.95-107
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Ternary silicide formation from Ni-Pt, Ni-Pd and Pt-Pd alloys on Si(100) : nucleation and solid solubility of the monosilicides

A Schrauwen, J Demeulemeester, Davy Deduytsche (UGent) , Wouter Devulder (UGent) , Christophe Detavernier (UGent) , CM Comrie, K Temst and A Vantomme

(2017) ACTA MATERIALIA. 130. p.19-27
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The role of composition and microstructure in Ni-W silicide formation and low temperature epitaxial NiSi2 growth by premixing Si

A Schrauwen, K Van Stiphout, J Demeulemeester, Bob De Schutter (UGent) , Wouter Devulder (UGent) , CM Comrie, Christophe Detavernier (UGent) , K Temst and A Vantomme

(2017) JOURNAL OF PHYSICS D-APPLIED PHYSICS. 50(6).
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On the formation and structural properties of hexagonal rare earth (Y, Gd, Dy, Er and Yb) disilicide thin films

Filip Geenen (UGent) , Werner Knaepen (UGent) , J Demeulemeester, Koen De Keyser, JL Jordan-Sweet, C Lavoie, A Vantomme and Christophe Detavernier (UGent)

(2014) JOURNAL OF ALLOYS AND COMPOUNDS. 611. p.149-156
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On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction

A Schrauwen, J Demeulemeester, A Kumar, W Vandervorst, CM Comrie, Christophe Detavernier (UGent) , K Temst and A Vantomme

(2013) JOURNAL OF APPLIED PHYSICS. 114(6).
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Effect of high temperature deposition on CoSi2 phase formation

CM Comrie, H Ahmed, D Smeets, J Demeulemeester, S Turner, G Van Tendeloo, Christophe Detavernier (UGent) and A Vantomme

(2013) JOURNAL OF APPLIED PHYSICS. 113(23).
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On the growth kinetics of Ni(Pt) silicide thin films

J Demeulemeester, D Smeets, CM Comrie, NP Barradas, A Vieira, Charlotte Van Bockstael, Christophe Detavernier (UGent) , K Temst and A Vantomme

(2013) JOURNAL OF APPLIED PHYSICS. 113(16).

Academic Bibliography

Ion beam modification of the Ni-Si solid-phase reaction : the influence of substrate damage and nitrogen impurities introduced by ion implantation

Pan-cancer analysis of whole genomes

Impurity-enhanced solid-state amorphization : the Ni-Si thin film reaction altered by nitrogen

LEDGF/p75 is dispensable for hematopoiesis but essential for MLL-rearranged leukemogenesis

Ternary silicide formation from Ni-Pt, Ni-Pd and Pt-Pd alloys on Si(100) : nucleation and solid solubility of the monosilicides

The role of composition and microstructure in Ni-W silicide formation and low temperature epitaxial NiSi2 growth by premixing Si

On the formation and structural properties of hexagonal rare earth (Y, Gd, Dy, Er and Yb) disilicide thin films

On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction

Effect of high temperature deposition on CoSi2 phase formation

On the growth kinetics of Ni(Pt) silicide thin films

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