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Study of recombination characteristics in MOCVD grown GaN epi-layers on Si
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Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices
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ESR spectroscopy of alanine impacted by high energy irradiations for wide range dosimetry
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Study of radiation defect characteristics in Ge doped Si structures
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Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes
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Carrier lifetime studies in diode structures on Si substrates with and without Ge doping
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Analysis of Auger recombination characteristics in high resistivity Si and Ge
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- Conference Paper
- C3
- open access
Recent developments in understanding and modeling of defects in Czochralski germanium
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Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium
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Spectroscopy of metal related levels in Ge by transient infrared and microwave absorption techniques
(2008) MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. 154(Sp. Iss.). p.172-174