Ghent University Academic Bibliography

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Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

E Gaubas, T Ceponis, D Dobrovolskas, T Malinauskas, D Meskauskaite, S Miasojedovas, J Mickevicius, J Pavlov, V Rumbauskas, Eddy Simoen (UGent) , et al.

(2017) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 32(12).
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Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices

E Gaubas, Eddy Simoen (UGent) and Jan Vanhellemont (UGent)

(2016) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 5(4). p.P3108-P3137
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ESR spectroscopy of alanine impacted by high energy irradiations for wide range dosimetry

Tomas Čeponis, Eugenijus Gaubas, J Venius, A Cicinas, Freddy Callens (UGent) , Jevgenij Kusakovskij (UGent) , Henk Vrielinck (UGent) , K Mizohata, J Raisanen and P Tikkanen

(2016) LITHUANIAN JOURNAL OF PHYSICS. 56(1). p.49-54
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Study of radiation defect characteristics in Ge doped Si structures

A Uleckas, E Gaubas, LF Makarenko and Jan Vanhellemont (UGent)

(2012) Radiation Interaction with Material and Its Use in Technologies. In Radiation Interaction wtih Material and Its Use in Technologies p.270-273
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Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

E Gaubas, A Uleckas, JM Rafi, J Chen, D Yang and Jan Vanhellemont (UGent)

(2012) PHYSICA B-CONDENSED MATTER. 407(15). p.2998-3001
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Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

A Uleckas, E Gaubas, JM Rafi, J Chen, D Yang, H Ohyama, E Simoen and Jan Vanhellemont (UGent)

(2011) Solid State Phenomena. In Solid State Phenomena 178-179. p.347-352
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Analysis of Auger recombination characteristics in high resistivity Si and Ge

A Uleckas, E Gaubas, T Ceponis, K Zilinskas, R Grigonis, V Sirutkaitis and Jan Vanhellemont (UGent)

(2011) Solid State Phenomena. In Solid State Phenomena 178-179. p.427-432
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- Conference Paper
- C3
- open access
Recent developments in understanding and modeling of defects in Czochralski germanium

Jan Vanhellemont (UGent) , Piotr Spiewak, Eugenijus Gaubas, Johan Lauwaert (UGent) , Henk Vrielinck (UGent) , Paul Clauws (UGent) , Eddy Simoen and Igor Romandic

(2010) Germanium-Based Detectors and Technologies, Presentations of the workshop.
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Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium

E Gaubas, A Uleckas and Jan Vanhellemont (UGent)

(2009) SUPERLATTICES AND MICROSTRUCTURES. 45(4-5). p.256-266
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Spectroscopy of metal related levels in Ge by transient infrared and microwave absorption techniques

E. Gaubas, A. Uleckas, R. Grigonis, V. Sirutkaitis and Jan Vanhellemont (UGent)

(2008) MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. 154(Sp. Iss.). p.172-174

Academic Bibliography

Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices

ESR spectroscopy of alanine impacted by high energy irradiations for wide range dosimetry

Study of radiation defect characteristics in Ge doped Si structures

Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

Analysis of Auger recombination characteristics in high resistivity Si and Ge

Recent developments in understanding and modeling of defects in Czochralski germanium

Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium

Spectroscopy of metal related levels in Ge by transient infrared and microwave absorption techniques

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