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High-efficiency 650 nm thin-film light-emitting diodes.
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InAlGaP materials and red emitting LEDs on GaAs and Ge substrates
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5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates.
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High-efficiency thin-film light-emitting diodes at 650 nm.
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MOVPE based Zn diffusion into InP and InAsP/InP hetero structures.
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Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD).
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4mW micro cavity LED at 650nm on germanium substrates.
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InAlGaP microcavity LEDs on Ge-substrates
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High efficiency InAlGaP microcavity LEDs on Ge-substrates
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Development of InAlGaP-materials on Ge-substrates for red light emitters, using a safe MOVPE-process
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AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates.
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(Al)GaInP multiquantum well LEDs on GaAs and Ge.
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High quality AlGaInP layers on GaAs and Ge grown by MOVPE.
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(Al)GaInP multiquantum well LEDs on Ge and GaAs.
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Germanium as a growth substrate for high quality AlGaAs/InGaAs laser diodes.
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Germanium - The all-purpose substrate of the future?
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High quality InGaAs/AlGaAs lasers grown on Ge substrates.
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Ontwikkeling van MOVPE-gebaseerde InGaAs/InP fotodetectoren en laserdioden voor golflengten > 1.65µm
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Dark current optimisation of 2.5 µm wavelength, 2% mismatched InGaAs photodetectors on InP
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High quality InGaAs/AlGaAs lasers grown on Ge substrates.
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Dark current optimisation for MOVPE grown 2.51 mu m wavelength InGaAs photodetectors.
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Study and development of extended wavelength InGaAs detectors
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Low dark current, mismatched InO.82GaO.18As/InAsyPl-y photodetectors for 2.5um wavelength, grown on InP by MOVPE.
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Influence of buffer layer and processing on the dark current of 2.5 mu m-wavelength 2%-mismatched InGaAs photodetectors.
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Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth.
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Dark current reduction for 2.5 µm wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature
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Characterisation of 2 mismatched InGaAs layers, grown on different buffer- layers and at different growth temperatures
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InGaAsP/InP strained MQW laser with integrated mode size converter using the shadow masked growth technique
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Monolithic integration of a mode size converter with a laser diode using MOVPE shadow masked growth
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Vertically tapered InGaAsP/InP waveguides and lasers resulting in low-loss fibre-chip coupling.
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Monolithic integration of a spot size transformer with a planar buried heterostructure in GaAsP/InP-laser using the shadow masked growth technique.
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III-V SEMICONDUCTOR WAVE-GUIDING DEVICES USING ADIABATIC TAPERS.
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Epitaxial lift-off of GaAs LEDs to coated silicon.