Show
Sort by
-
Comparative study of carrier lifetime dependence on dopant concentration in silicon and germanium
-
Single crystal CaS: Eu and SrS: Eu luminescent particles obtained by solvothermal synthesis
-
- Journal Article
- A1
- open access
Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene
-
Chemical modification of buildup epoxy surfaces for altering the adhesion of electrochemically deposited copper
-
Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon
-
The formation of Eu2+ clusters in saturated red Ca0.5Sr0.5S: Eu electroluminescent devices
-
Adhesion strength of the epoxy polymer/copper interface for use in microelectronics
-
Influence of chemical pretreatment of epoxy polymers on the adhesion strength of electrochemically deposited Cu for use in electronic interconnections
-
Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy
-
Kinetic study of wet chemical treatments on the surface roughness of epoxy polymer layers for buildup layers - II. Oxidative treatment of the surface