Ghent University Academic Bibliography

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Model and parameter extraction strategy impact on the estimated values of MOSFET parameters in ohmic operation

Abderrahim Tahiat, Bogdan Cretu, Anabela Veloso and Eddy Simoen (UGent)

(2026) SOLID-STATE ELECTRONICS. 231.
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- Journal Article
- A1
- open access
Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K

A. Tahiat, B. Cretu, A. Veloso and Eddy Simoen (UGent)

(2025) SOLID-STATE ELECTRONICS. 225.
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- Journal Article
- A1
- open access
Novel Y-function methodology parameter estimation from weak to strong inversion operation

A. Tahiat, B. Cretu, A. Veloso and Eddy Simoen (UGent)

(2025) SOLID-STATE ELECTRONICS. 225.
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- Journal Article
- A1
- open access
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

Eddy Simoen (UGent) , Anabela Veloso, Philippe Matagne and Cor Claeys

(2023) SOLID-STATE ELECTRONICS. 200.
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- A1
- open access
3D backside integration of FinFETs : is there an impact on LF noise?

Eddy Simoen (UGent) , Anne Jourdain, Cor Claeys and Anabela Veloso

(2023) SOLID-STATE ELECTRONICS. 207.
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A fully integrated half-bridge driver circuit in All-GaN GAN-IC technology

Urmimala Chatterjee, Herbert De Pauw (UGent) , Olga Syshchyk, Thibault Cosnier, Anurag Vohra and Stefaan Decoutere

(2023) SOLID-STATE ELECTRONICS. 207.
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A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

Lionel Trojman, Eliana Acurio, Brice De Jaeger, Niels Posthuma, Stefaan Decoutere and Benoit Bakeroot (UGent)

(2023) SOLID-STATE ELECTRONICS. 210.
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TCAD-based design and verification of the components of a 200 V GaN-IC platform

Pavan Vudumula, Thibault Cosnier, Olga Syshchyk, Benoit Bakeroot (UGent) and Stefaan Decoutere

(2023) SOLID-STATE ELECTRONICS. 200.
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- Journal Article
- A1
- open access
Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?

A. Tahiat, B. Cretu, A. Veloso and Eddy Simoen (UGent)

(2023) SOLID-STATE ELECTRONICS. 209.
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A monolithic low-power-consumption driver circuit based on a Dickson charge pump for MEMS actuator applications

Hui Peng, Herbert De Pauw (UGent) , Pieter Bauwens (UGent) and Jan Doutreloigne (UGent)

(2020) SOLID-STATE ELECTRONICS. 164.

Academic Bibliography

Model and parameter extraction strategy impact on the estimated values of MOSFET parameters in ohmic operation

Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K

Novel Y-function methodology parameter estimation from weak to strong inversion operation

Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

3D backside integration of FinFETs : is there an impact on LF noise?

A fully integrated half-bridge driver circuit in All-GaN GAN-IC technology

A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

TCAD-based design and verification of the components of a 200 V GaN-IC platform

Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?

A monolithic low-power-consumption driver circuit based on a Dickson charge pump for MEMS actuator applications

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