Ghent University Academic Bibliography

Journal Article
A1
open access

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

Liad Tadmor, Enrico Brusaterra, Eldad Bahat Treidel, Frank Brunner, Nicole Bickel, Sofie Vandenbroucke (UGent) , Christophe Detavernier (UGent) , Joachim Würfl and Oliver Hilt

(2023) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 38(1).

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Journal Article
A1
open access

Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates

Eddy Simoen (UGent) , Po-Chun (Brent) Hsu, A Alian, S El Kazzi and C Wang

(2019) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 34(7).

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Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS capacitors

Chong Wang, Eddy Simoen (UGent) , Ming Zhao and Wei Li

(2017) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 32(10).

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Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

E Gaubas, T Ceponis, D Dobrovolskas, T Malinauskas, D Meskauskaite, S Miasojedovas, J Mickevicius, J Pavlov, V Rumbauskas, Eddy Simoen (UGent) , et al.

(2017) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 32(12).

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Photoluminescence of phosphorus atomic layer doped Ge grown on Si

Yuji Yamamoto, Li-Wei Nien, Giovanni Capellini, Michele Virgilio, Ioan Costina, Markus Andreas Schubert, Winfried Seifert, Srinivasan Ashwyn Srinivasan (UGent) , Roger Loo, Giordano Scappucci, et al.

(2017) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 32(10). p.1-6

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Deep levels in silicon-oxygen superlattices

Eddy Simoen (UGent) , S Jayachandran, A Delabie, M Caymax and M Heyns

(2016) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 31(2).

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In situ UHVEM study of {113}-defect formation in Si nanowires

Jan Vanhellemont (UGent) , Satoshi Anada, Hidehiro Yasuda, Patricia Van Marcke, Hugo Bender, Rita Rooyackers and Anne Vandooren

(2015) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 30(11).

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An introduction to InP-based generic integration technology

Meint Smit, Xaveer Leijtens, Huub Ambrosius, Erwin Bente, Jos van der Tol, Barry Smalbrugge, Tjibbe de Vries, Erik-Jan Geluk, Jeroen Bolk, Rene van Veldhoven, et al.

(2014) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 29(8).

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Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon

O Oberemok, V Kladko, V Litovchenko, B Romanyuk, V Popov, V Melnik, A Sarikov, O Gudymenko and Jan Vanhellemont (UGent)

(2014) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 29(5).

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Journal Article
A1
open access

Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge

Siegfried Segers (UGent) , Johan Lauwaert (UGent) , Paul Clauws (UGent) , Eddy Simoen (UGent) , Jan Vanhellemont (UGent) , Freddy Callens (UGent) and Henk Vrielinck (UGent)

(2014) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 29(12).

Academic Bibliography

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates

Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS capacitors

Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

Deep levels in silicon-oxygen superlattices

In situ UHVEM study of {113}-defect formation in Si nanowires

An introduction to InP-based generic integration technology

Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon

Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge

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