Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Save this search Download search results Subscribe to news feed Your filters: cql: parent exact "SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES" Add to list Journal Article P1 P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type Czochralski silicon YL HUANG, E SIMOEN, R JOB, C CLAEYS, W DUNGEN, Y MA, WR FAHRNER, Jorg Versluys and Paul Clauws (UGent) (2005) SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES. 864. p.307-312