Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Save this search Download search results Subscribe to news feed Your filters: cql: parent exact "Proceedings of the International Symposium on Power Semiconductor Devices & ICs" Add to list Conference Paper P1 Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs Arno Stockman (UGent) , Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Peter Moens and Benoit Bakeroot (UGent) (2019) 2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD). In Proceedings of the International Symposium on Power Semiconductor Devices & ICs p.287-290 Add to list Conference Paper P1 Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization P. Moens, A. Constant, Arno Stockman (UGent) , J. Franchi and F. Allerstam (2019) 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). In Proceedings of the International Symposium on Power Semiconductor Devices & ICs p.163-166 Add to list Conference Paper P1 The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate TL Wu, D Marcon, B De Jaeger, M Van Hove, B Bakeroot, DN Lin, S Stoffels, XW Kang, R Roelofs, G Groeseneken, et al. (2015) Proceedings of the International Symposium on Power Semiconductor Devices & ICs. In Proceedings of the International Symposium on Power Semiconductor Devices & ICs p.225-228 Add to list Conference Paper P1 TCAD methodology for simulation of GaN-HEMT power devices Stephan Strauss, Axel Erlebach, Tommaso Cilento, Marcon Denis, Steve Stoffels and Benoit Bakeroot (UGent) (2014) Proceedings of the International Symposium on Power Semiconductor Devices & ICs. p.257-260