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Study of electron traps associated with oxygen superlattices in n‐type silicon
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Jan Vanhellemont : 35 years of materials research in microelectronics
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Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon
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Impact of dopants and silicon structure dimensions on {113}-defect formation during 2 MeV electron irradiation in an UHVEM
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In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures
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Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs
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Resistivity changes of low resistivity Si substrates by rapid thermal processing and subsequent annealing
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Formation energy of intrinsic point defects in nanometer-thick Si and Ge foils and implications for Ge crystal growth from a melt
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Determination of the Si Young's modulus between room and melt temperature using the impulse excitation technique
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Determination of the single crystal Ge Young’s modulus between room temperature and melting temperature using the impulse excitation technique