Ghent University Academic Bibliography

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- Journal Article
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Phase and structural particularities of nanosized granular inverse spinels

I NEDKOV, Robert Vandenberghe (UGent) , G VISSOKOV, T MERODIISKA, S KOLEV and K KREZHOV

(2004) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 201(5). p.1001-1010
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- Journal Article
- A1
DLTS studies of high-temperature electron irradiated Cz n-Si

V NEIMASH, M KRAS'KO, A KRAITCHINSKII, V VOYTOVYCH, V TISHCHENKO, E SIMOEN, JM RAFI, C CLAEYS, Jorg Versluys, Olivier De Gryse, et al.

(2004) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 201(3). p.509-516
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- Journal Article
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Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN-GaNHEMT-like structures

Zahia Bougrioua, Ingrid Moerman (UGent) , L NISTOR, B VAN DAELE, E MONROY, T PALACIOS, F CALLE and M LEROUX

(2003) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 195(1). p.93-100
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- Journal Article
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Influence of process technology on DC-performance of GaN-based HFETs.

D MISTELE, T ROTTER, Zahia Bougrioua, M MARSO, H ROLL, H KLAUSING, F FEDLER, O SEMCHINOVA, J ADERHOLD, Ingrid Moerman (UGent) , et al.

(2002) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 194(2). p.452-455
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- Journal Article
- A1
Reliability of Schottky contacts on AlGaN.

E MONROY, F CALLE, T PALACIOS, J SANCHEZ-OSORIO, M VERDU, FJ SANCHEZ, MT MONTOJO, F OMNES, Zahia Bougrioua, Ingrid Moerman (UGent) , et al.

(2001) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 188(1). p.367-370
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- Journal Article
- A1
Effect of dielectric layers on the performance of AlGaN-based UV Schottky photodiodes.

E MONROY, F CALLE, JL PAU, E MUNOZ, M VERDU, FJ SANCHEZ, MT MONTOJO, F OMNES, Zahia Bougrioua, Ingrid Moerman (UGent) , et al.

(2001) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 188(1). p.307-310
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- Journal Article
- A1
Epitaxial lateral overgrowth of GaN on sapphire - An examination of epitaxy quality using synchrotron X-ray topography.

PJ MCNALLY, T TUOMI, D LOWNEY, Koen Jacobs, AN DANILEWSKY, R RANTAMAKI, M O'HARE and L CONSIDINE

(2001) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 185(2). p.373-382
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- Journal Article
- A1
Heterostructure field effect transistor types with novel gate dielectrics.

D MISTELE, T ROTTER, Zahia Bougrioua, KS ROVER, F FEDLER, H KLAUSING, J STEMMER, OK SEMCHINOVA, J ADERHOLD and J GRAUL

(2001) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 188(1). p.255-258
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- Journal Article
- A1
Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD.

JJ HARRIS, KJ LEE, I HARRISON, LB FLANNERY, D KORAKAKIS, TS CHENG, CT FOXON, Zahia Bougrioua, Ingrid Moerman (UGent) , Wim Van der Stricht, et al.

(1999) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 176(1). p.363-367
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- Journal Article
- A1
Low-temperature cross-over effect in ultrasonic damping in YBCO ceramics

SN GOLYANDIN, BK KARDASHEV, SB KUSTOV, SP NIKANOROV, Paul Devos (UGent) , J CORNELIS and R DEBATIST

(1995) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 147(1). p.111-118

Academic Bibliography

Phase and structural particularities of nanosized granular inverse spinels

DLTS studies of high-temperature electron irradiated Cz n-Si

Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN-GaNHEMT-like structures

Influence of process technology on DC-performance of GaN-based HFETs.

Reliability of Schottky contacts on AlGaN.

Effect of dielectric layers on the performance of AlGaN-based UV Schottky photodiodes.

Epitaxial lateral overgrowth of GaN on sapphire - An examination of epitaxy quality using synchrotron X-ray topography.

Heterostructure field effect transistor types with novel gate dielectrics.

Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD.

Low-temperature cross-over effect in ultrasonic damping in YBCO ceramics

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