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Compressively strained epitaxial Ge layers for quantum computing applications
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The Hakoniwa method, an approach to predict material properties based on statistical thermodynamics and ab initio calculations
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On the diffusion and activation of n-type dopants in Ge
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Electrical passivation by hydrogen plasma treatment of transition metal impurities in germanium
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E-MRS 2008 Spring Conference Symposium J: Beyond silicon technology: materials and devices for post-Si CMOS: preface
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Metal implants-dependent carrier recombination characteristics in Ge
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Ab-initio simulation of self-interstitial in germanium
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Metals in germanium
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Carrier lifetime studies in Ge using microwave and infrared light techniques
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Determination of oxide precipitate phase and morphology in silicon and germanium using infra-red absorption spectroscopy
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Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth
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A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium
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A deep-level transient spectroscopy study of transition metals in n-type germanium
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Hydrogen-plasma-induced plate-like cavity clusters in single-crystalline germanium
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Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystals
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Defect analysis of n-type silicon strained layers.
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Lifetime measurements on Ge wafers for Ge/GaAs solar cells - chemical surface passivation.
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Development of a visible VCSEL-to-plastic optical fibre module for use in high-speed optical data links.
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MT (TM)-compatible connectorisation of VCSEL and RCLED arrays to plastic optical fibre ribbon for low cost parallel datalinks.