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Compressively strained epitaxial Ge layers for quantum computing applications
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Development of photocatalytic semiconductors and nanocomposites with excellent optoelectronic and electrochemical properties for dye effluent remediation : a review
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The Hakoniwa method, an approach to predict material properties based on statistical thermodynamics and ab initio calculations
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On the diffusion and activation of n-type dopants in Ge
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E-MRS 2008 Spring Conference Symposium J: Beyond silicon technology: materials and devices for post-Si CMOS: preface
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Metal implants-dependent carrier recombination characteristics in Ge
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Ab-initio simulation of self-interstitial in germanium
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Electrical passivation by hydrogen plasma treatment of transition metal impurities in germanium
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Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth
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A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium