Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Download search results Subscribe to news feed Your filters: cql: parent exact "Joint ICSI/ISTDM 2025 Conference" Add to list Conference Paper C3 Epitaxial growth of strain relaxed SiGe layers with GeCl4 Yosuke Shimura, Clement Porret, Danny Wan, Kristiaan De Greve and Roger Loo (UGent) (2025) Joint ICSI/ISTDM 2025 Conference. p.153-154 Add to list Conference Paper C3 Epitaxial growth of up to 120x {Si0.8Ge0.2 / Si} bilayers in view of 3D DRAM applications Roger Loo (UGent) , M. Beggiato, Y. Shimura, N. Rassoul, W. Vanherle, F. Seidel, K. Paulussen, J. Bogdanowicz, A. Merkulov, M. Ayyad, et al. (2025) Joint ICSI/ISTDM 2025 Conference. Add to list Conference Paper C3 Ge epitaxy on Si (001) using halide-based chemical vapor deposition Ambrishkumar J. Devaiya, Omar Concepción, Clement Porret, Daniel McDermott, Andreas T. Tiedemann, Jinyoun Cho, Kristof Dessin, Sanjay Mathur, Detlev Grützmacher, Dan Buca, et al. (2025) Joint ICSI/ISTDM 2025 Conference. p.169-170 Add to list Conference Paper C3 Low temperature SiGe:B source/drain epitaxy for CFET applications Thomas Dursap, Clement Porret, Alex Merkulov, Paola Favia, Robert Langer, Min-Soo Kim, Naoto Horiguchi and Roger Loo (UGent) (2025) Joint ICSI/ISTDM 2025 Conference. Add to list Conference Paper C3 300 mm production compatible fabrication of quantum computing devices Stefan Kubicek, S. Beyne, S. Sharma, S. Massar, C. Godfrin, B. Raes, A. Loenders, J. Jussot, Y. Hermans, Y. Li, et al. (2025) Joint ICSI/ISTDM 2025 Conference.