Ghent University Academic Bibliography

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Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Liad Tadmor, Sofie Vandenbroucke (UGent) , Eldad Bahat Treidel, Enrico Brusaterra, Paul Plate, Nicole Volkmer, Frank Brunner, Christophe Detavernier (UGent) , Joachim Wurfl and Oliver Hilt

(2024) JOURNAL OF APPLIED PHYSICS. 135(8).
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Tutorial : simulating modern magnetic material systems in mumax3

Jonas Joos (UGent) , Pedram Bassirian, Pieter Gypens (UGent) , Jeroen Mulkers (UGent) , Kai Litzius, Bartel Van Waeyenberge (UGent) and Jonathan Leliaert (UGent)

(2023) JOURNAL OF APPLIED PHYSICS. 134(17).
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Plasma technology in antimicrobial surface engineering

Anton Nikiforov (UGent) , Chuanlong Ma (UGent) , Andrei Choukourov and Fabio Palumbo

(2022) JOURNAL OF APPLIED PHYSICS. 131(1).
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Magnetic nanoparticles in theranostic applications

Annelies Coene (UGent) and Jonathan Leliaert (UGent)

(2022) JOURNAL OF APPLIED PHYSICS. 131(16).
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Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Hongyue Wang, Po-Chun (Brent) Hsu, Ming Zhao, Eddy Simoen (UGent) , Stefan De Gendt, Arturo Sibaja-Hernandez and Jinyan Wang

(2021) JOURNAL OF APPLIED PHYSICS. 130(20).
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In-plane characterization of PZT thin films for the creation of a general impedance model

Tessa Van de Veire (UGent) , John Puthenparampil George (UGent) , Hannes Rijckaert (UGent) , Kristiaan Neyts (UGent) , Johan Lauwaert (UGent) , Filip Beunis (UGent) and Jeroen Beeckman (UGent)

(2021) JOURNAL OF APPLIED PHYSICS. 129(9).
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Hydrodynamics of fringing-field induced defects in nematic liquid crystals

Richard James (UGent) , Eero Willman, Rami Ghannam, Jeroen Beeckman (UGent) and F. Aníbal Fernández

(2021) JOURNAL OF APPLIED PHYSICS. 130(13).
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Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor : investigation and modeling

F. Masin, C. De Santi, Jan Lettens (UGent) , J. Franchi, M. Domeij, P. Moens, M. Meneghini, G. Meneghesso and E. Zanoni

(2021) JOURNAL OF APPLIED PHYSICS. 130(14).
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Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements

Jonas Keukelier (UGent) , Karl Opsomer, Wouter Devulder, Sergiu Clima, Ludovic Goux, Gouri Sankar Kar and Christophe Detavernier (UGent)

(2021) JOURNAL OF APPLIED PHYSICS. 130(16).
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Understanding residual stress in thin films : analyzing wafer curvature measurements for Ag, Cu, Ni, Fe, Ti, and Cr with a kinetic model

Zhaoxia Rao, Sarah Berman, Peilin Yang, Diederik Depla (UGent) and Eric Chason

(2021) JOURNAL OF APPLIED PHYSICS. 130(13).

Academic Bibliography

Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Tutorial : simulating modern magnetic material systems in mumax3

Plasma technology in antimicrobial surface engineering

Magnetic nanoparticles in theranostic applications

Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

In-plane characterization of PZT thin films for the creation of a general impedance model

Hydrodynamics of fringing-field induced defects in nematic liquid crystals

Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor : investigation and modeling

Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements

Understanding residual stress in thin films : analyzing wafer curvature measurements for Ag, Cu, Ni, Fe, Ti, and Cr with a kinetic model

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