Ghent University Academic Bibliography

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Muon tomography for cultural heritage objects

Maxime Lagrange, Marwa Al Moussawi, Matthieu Boone (UGent) , Tim De Kock, Judy De Roy, Andrea Giammanco, Sam Huysmans and Michael Tytgat (UGent)

(2025) JOURNAL OF APPLIED PHYSICS. 138(10).
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Study of the temperature dependent trap-dominated conduction in GeSe and GeSe2 Ovonic threshold switching selectors

Jonas Keukelier (UGent) , Seppe Van Dyck (UGent) , Wouter Devulder, Karl Opsomer and Christophe Detavernier (UGent)

(2025) JOURNAL OF APPLIED PHYSICS. 138(13).
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Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications

Roger Loo (UGent) , M. Beggiato, Y. Shimura, N. Rassoul, W. Vanherle, F. Seidel, K. Paulussen, A. Merkulov, M. Ayyad, I. Lee, et al.

(2025) JOURNAL OF APPLIED PHYSICS. 138(5).
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Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Liad Tadmor, Sofie Vandenbroucke (UGent) , Eldad Bahat Treidel, Enrico Brusaterra, Paul Plate, Nicole Volkmer, Frank Brunner, Christophe Detavernier (UGent) , Joachim Wurfl and Oliver Hilt

(2024) JOURNAL OF APPLIED PHYSICS. 135(8).
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Tutorial : simulating modern magnetic material systems in mumax3

Jonas Joos (UGent) , Pedram Bassirian, Pieter Gypens (UGent) , Jeroen Mulkers (UGent) , Kai Litzius, Bartel Van Waeyenberge (UGent) and Jonathan Leliaert (UGent)

(2023) JOURNAL OF APPLIED PHYSICS. 134(17).
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Plasma technology in antimicrobial surface engineering

Anton Nikiforov (UGent) , Chuanlong Ma (UGent) , Andrei Choukourov and Fabio Palumbo

(2022) JOURNAL OF APPLIED PHYSICS. 131(1).
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Magnetic nanoparticles in theranostic applications

Annelies Coene (UGent) and Jonathan Leliaert (UGent)

(2022) JOURNAL OF APPLIED PHYSICS. 131(16).
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In-plane characterization of PZT thin films for the creation of a general impedance model

Tessa Van de Veire (UGent) , John Puthenparampil George (UGent) , Hannes Rijckaert (UGent) , Kristiaan Neyts (UGent) , Johan Lauwaert (UGent) , Filip Beunis (UGent) and Jeroen Beeckman (UGent)

(2021) JOURNAL OF APPLIED PHYSICS. 129(9).
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Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Hongyue Wang, Po-Chun (Brent) Hsu, Ming Zhao, Eddy Simoen (UGent) , Stefan De Gendt, Arturo Sibaja-Hernandez and Jinyan Wang

(2021) JOURNAL OF APPLIED PHYSICS. 130(20).
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Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor : investigation and modeling

F. Masin, C. De Santi, Jan Lettens (UGent) , J. Franchi, M. Domeij, P. Moens, M. Meneghini, G. Meneghesso and E. Zanoni

(2021) JOURNAL OF APPLIED PHYSICS. 130(14).

Academic Bibliography

Muon tomography for cultural heritage objects

Study of the temperature dependent trap-dominated conduction in GeSe and GeSe2 Ovonic threshold switching selectors

Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications

Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Tutorial : simulating modern magnetic material systems in mumax3

Plasma technology in antimicrobial surface engineering

Magnetic nanoparticles in theranostic applications

In-plane characterization of PZT thin films for the creation of a general impedance model

Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor : investigation and modeling

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