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- Journal Article
- A1
- open access
Route toward commercially manufacturable vertical GaN devices
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- Journal Article
- A1
- open access
Refined DC and low-frequency noise characterization at room and cryogenic temperatures of vertically stacked silicon nanosheet FETs
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- Journal Article
- A1
- open access
Role of the GaN-on-Si epi-stack on ΔRON caused by back-gating stress
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Using gate leakage conduction to understand positive gate bias induced threshold voltage shift in p-GaN gate HEMTs
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- Journal Article
- A1
- open access
NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs
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- Journal Article
- A1
- open access
Compact modeling of nonideal trapping/detrapping processes in GaN power devices
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TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
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Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks
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High-temperature time-dependent gate breakdown of p-GaN HEMTs
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Reliability of p-GaN gate HEMTs in reverse conduction
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- Journal Article
- A1
- open access
Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs
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Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs
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Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration
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Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications
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Modeling of short-channel effects in GaN HEMTs
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Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates
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Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior
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The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors
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Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI
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Gate reliability of p-GaN HEMT with gate metal retraction
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Influence of GaN- and Si3N4-passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
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Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors
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Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination
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Investigation on carrier transport through AIN nucleation layer from differently doped Si(111) substrates
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Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors
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Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination
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Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate
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Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs
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TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs
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Polyimide-enhanced stretchable interconnects: design, fabrication, and characterization
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Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies
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Compact modeling of lateral nonuniform doping in high-voltage MOSFETs
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- Journal Article
- A1
- open access
Realization of a four-electrode liquid crystal device with full in-plane director rotation
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Electrical modeling of interface roughness in thin film electroluminescent devices.
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Extension of the collector charge description for compact bipolar epilayer models
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Simulation and measurement of multiplication in thin-film electroluminescent devices with doped probe layers
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Investigation of the frequency dispersion effect in the root-model applied to conventional and floating-gate MESFET's.
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RF and 1/F noise investigations on MESFETS and circuits transplanted by epitaxial lift off.
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Numerical simulation of charge transfer and light emission in SrS:Ce thin-film electroluminescent devices.
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SPACE-CHARGE AND LIGHT GENERATION IN SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES.
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Fast and accurate extraction of parasitic resistances for nonlinear GaAs-MESFET device models.
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Simple-model for the hysteric behavior of thin-film electroluminescent devices
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High-voltage polycrystalline CdSe thin-film transistors
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Modeling of MOS-transistors with nonrectangular gate geometries: comment
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Two-dimensional modeling of the MIS grating solar-cell
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Theoretical-analysis of Cu2S-CdS solar-cells with rough interfaces
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On the theory of thin-film MIS capacitances
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Collection efficiency of heterojunction solar-cells
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Carrier concentrations from MIS C-V measurements
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A method for continuously measuring the pinch-off voltage shift of fet structures