Ghent University Academic Bibliography

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2016
- A1
- journalArticle
Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate
J Hu, S Stoffels, S Lenci, Benoit Bakeroot UGent, B De Jaeger, M Van Hove, N Ronchi, R Venegas, H Liang, M Zhao, et al. (2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(3). p.997-1004 Mark
- A1
- journalArticle
Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination
Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, Nicolo Ronchi, Andrea Natale Tallarico, Dirk Wellekens, Shuzhen You, Benoit Bakeroot UGent, Guido Groeseneken, et al. (2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(9). p.3451-3458 Mark
- A1
- journalArticle
Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs
TL Wu, J Franco, D Marcon, B De Jaeger, Benoit Bakeroot UGent, S Stoffels, M Van Hove, G Groeseneken and S Decoutere (2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(5). p.1853-1860 Mark
2015
- A1
- journalArticle
TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs
Rudolf Theoderich Bühler, Geert Eneman, Paola Favia, Liesbeth Johanna Witters, Benjamin Vincent, Andriy Hikavyy, Roger Loo, Hugo Bender, Nadine Collaert, Eddy Simoen UGent, et al. (2015) IEEE TRANSACTIONS ON ELECTRON DEVICES. 62(4). p.1079-1084 Mark
2011
- A1
- journalArticle
Polyimide-enhanced stretchable interconnects: design, fabrication, and characterization
Yung-Yu Hsu, Mario Gonzalez, Frederick Bossuyt UGent, Jan Vanfleteren UGent and Ingrid De Wolf (2011) IEEE TRANSACTIONS ON ELECTRON DEVICES. 58(8). p.2680-2688 Mark
2008
- A1
- journalArticle
Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies
Benoit Bakeroot UGent, Jan Doutreloigne UGent, Piet Vanmeerbeek and Peter Moens (2008) IEEE TRANSACTIONS ON ELECTRON DEVICES. 55(1). p.435-445 Mark
2007
- A1
- journalArticle
Compact modeling of lateral nonuniform doping in high-voltage MOSFETs
YS CHAUHAN, F KRUMMENACHER, R GILLON, Benoit Bakeroot UGent, MJ DECLERCQ and AM IONESCU (2007) IEEE TRANSACTIONS ON ELECTRON DEVICES. 54(6). p.1527-1539 Mark
- A1
- journalArticle
Realization of a four-electrode liquid crystal device with full in-plane director rotation
Chris Desimpel, Jeroen Beeckman UGent, Kristiaan Neyts UGent, Steven Verstuyft UGent, Dries Van Thourhout UGent, K D'HAVE and P RUDQUIST (2007) IEEE TRANSACTIONS ON ELECTRON DEVICES. 54(6). p.1295-1300 Mark
2000
- A1
- journalArticle
Electrical modeling of interface roughness in thin film electroluminescent devices.
Kristiaan Neyts UGent, Patrick De Visschere UGent, Bart Soenen and Gert Stuyven (2000) IEEE TRANSACTIONS ON ELECTRON DEVICES. 47(2). p.318-325 Mark
1998
- A1
- journalArticle
Simulation and measurement of multiplication in thin-film electroluminescent devices with doped probe layers
Kristiaan Neyts UGent and D CORLATAN (1998) IEEE TRANSACTIONS ON ELECTRON DEVICES. 45(4). p.768-777 Mark

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