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Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks
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Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications
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Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs
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Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration
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- Journal Article
- A1
- open access
Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs
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Influence of GaN- and Si3N4-passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
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The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors
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Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates
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Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior
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Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI