Academic Bibliography

Show Sort by

Your filters: cql: parent exact "IEEE TRANSACTIONS ON ELECTRON DEVICES"

Mark
Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate

J Hu, S Stoffels, S Lenci, Benoit Bakeroot (UGent) , B De Jaeger, M Van Hove, N Ronchi, R Venegas, H Liang, M Zhao, et al.

(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(3). p.997-1004
Mark
Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination

Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, Nicolo Ronchi, Andrea Natale Tallarico, Dirk Wellekens, Shuzhen You, Benoit Bakeroot (UGent) , Guido Groeseneken, et al.

(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(9). p.3451-3458
Mark
Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

TL Wu, J Franco, D Marcon, B De Jaeger, Benoit Bakeroot (UGent) , S Stoffels, M Van Hove, G Groeseneken and S Decoutere

(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(5). p.1853-1860
Mark
TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

Rudolf Theoderich Bühler, Geert Eneman, Paola Favia, Liesbeth Johanna Witters, Benjamin Vincent, Andriy Hikavyy, Roger Loo, Hugo Bender, Nadine Collaert, Eddy Simoen (UGent) , et al.

(2015) IEEE TRANSACTIONS ON ELECTRON DEVICES. 62(4). p.1079-1084
Mark
Polyimide-enhanced stretchable interconnects: design, fabrication, and characterization

Yung-Yu Hsu, Mario Gonzalez, Frederick Bossuyt (UGent) , Jan Vanfleteren (UGent) and Ingrid De Wolf

(2011) IEEE TRANSACTIONS ON ELECTRON DEVICES. 58(8). p.2680-2688
Mark
Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies

Benoit Bakeroot (UGent) , Jan Doutreloigne (UGent) , Piet Vanmeerbeek and Peter Moens

(2008) IEEE TRANSACTIONS ON ELECTRON DEVICES. 55(1). p.435-445
Mark
- journalArticle
- A1
- open access
Realization of a four-electrode liquid crystal device with full in-plane director rotation

Chris Desimpel, Jeroen Beeckman (UGent) , Kristiaan Neyts (UGent) , Steven Verstuyft (UGent) , Dries Van Thourhout (UGent) , K D'HAVE and P RUDQUIST

(2007) IEEE TRANSACTIONS ON ELECTRON DEVICES. 54(6). p.1295-1300
Mark
- journalArticle
- A1
Compact modeling of lateral nonuniform doping in high-voltage MOSFETs

YS CHAUHAN, F KRUMMENACHER, R GILLON, Benoit Bakeroot (UGent) , MJ DECLERCQ and AM IONESCU

(2007) IEEE TRANSACTIONS ON ELECTRON DEVICES. 54(6). p.1527-1539
Mark
- journalArticle
- A1
Electrical modeling of interface roughness in thin film electroluminescent devices.

Kristiaan Neyts (UGent) , Patrick De Visschere (UGent) , Bart Soenen and Gert Stuyven

(2000) IEEE TRANSACTIONS ON ELECTRON DEVICES. 47(2). p.318-325
Mark
- journalArticle
- A1
Simulation and measurement of multiplication in thin-film electroluminescent devices with doped probe layers

Kristiaan Neyts (UGent) and D CORLATAN

(1998) IEEE TRANSACTIONS ON ELECTRON DEVICES. 45(4). p.768-777

Academic Bibliography

Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate

Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination

Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

Polyimide-enhanced stretchable interconnects: design, fabrication, and characterization

Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies

Realization of a four-electrode liquid crystal device with full in-plane director rotation

Compact modeling of lateral nonuniform doping in high-voltage MOSFETs

Electrical modeling of interface roughness in thin film electroluminescent devices.

Simulation and measurement of multiplication in thin-film electroluminescent devices with doped probe layers

Contents

Support

Contact