Ghent University Academic Bibliography

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Refined DC and low-frequency noise characterization at room and cryogenic temperatures of vertically stacked silicon nanosheet FETs

Bogdan Cretu, Anabela Veloso and Eddy Simoen (UGent)

(2023) IEEE TRANSACTIONS ON ELECTRON DEVICES. 70(1). p.254-260
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NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs

Duan Xie, Eddy Simoen (UGent) , Hiroaki Arimura, Elena Capogreco, Jerome Mitard and Naoto Horiguchi

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(12). p.6985-6990
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Compact modeling of nonideal trapping/detrapping processes in GaN power devices

N. Modolo, C. De Santi, Giulio Baratella (UGent) , A. Bettini, M. Borga, N. Posthuma, Benoit Bakeroot (UGent) , S. You, S. Decoutere, A. Bevilacqua, et al.

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(8). p.4432-4437
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TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

A. N. Tallarico, M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and C. Fiegna

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(2). p.507-513
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Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks

Danghui Wang, Tianhan Xu, Eddy Simoen (UGent) , Bogdan Govoreanu, Cor Claeys and Yang Zhang

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(3). p.948-953
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Reliability of p-GaN gate HEMTs in reverse conduction

Deepthi Cingu, Xiangdong Li, Benoit Bakeroot (UGent) , Nooshin Amirifar, Karen Geens, Kristof J. P. Jacobs, Ming Zhao, Shuzhen You, Guido Groeseneken and Stefaan Decoutere

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(2). p.645-652
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High-temperature time-dependent gate breakdown of p-GaN HEMTs

M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, Benoit Bakeroot (UGent) , S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(11). p.5701-5706
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Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications

Matteo Borga, Carlo De Santi, S. Stoffels, Benoit Bakeroot (UGent) , Xiangdong Li, M. Zhao, M. Van Hove, S. Decoutere, Gaudenzio Meneghesso, Matteo Meneghini, et al.

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(2). p.595-599
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Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs

Duan Xie, Eddy Simoen (UGent) , Haifeng Chen, Hiroaki Arimura and Naoto Horiguchi

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(11). p.4713-4719
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Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

Hongyue Wang, Po-Chun Hsu, Ming Zhao, Eddy Simoen (UGent) , Arturo Sibaja-Hernandez and Jinyan Wang

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(11). p.4827-4833

Academic Bibliography

Refined DC and low-frequency noise characterization at room and cryogenic temperatures of vertically stacked silicon nanosheet FETs

NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs

Compact modeling of nonideal trapping/detrapping processes in GaN power devices

TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks

Reliability of p-GaN gate HEMTs in reverse conduction

High-temperature time-dependent gate breakdown of p-GaN HEMTs

Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications

Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs

Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

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