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Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications
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Influence of GaN- and Si3N4-passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
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Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates
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Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior
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The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors
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Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI
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Gate reliability of p-GaN HEMT with gate metal retraction
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Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors
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Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors
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Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination