Ghent University Academic Bibliography

Mark

Investigation on carrier transport through AIN nucleation layer from differently doped Si(111) substrates

Xiangdong Li, Marleen Van Hove, Ming Zhao, Benoit Bakeroot (UGent) , Shuzhen You, Guido Groeseneken and Stefaan Decoutere

(2018) IEEE TRANSACTIONS ON ELECTRON DEVICES. 65(5). p.1721-1727

Mark

Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination

Eliana Acurio, Felice Crupi, Nicolo Ronchi, Brice De Jaeger, Benoit Bakeroot (UGent) , Stefaan Decoutere and Lionel Trojman

(2018) IEEE TRANSACTIONS ON ELECTRON DEVICES. 65(5). p.1765-1770

Mark

Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors

Benoit Bakeroot (UGent) , Arno Stockman (UGent) , Niels Posthuma, Steve Stoffels and Stefaan Decoutere

(2018) IEEE TRANSACTIONS ON ELECTRON DEVICES. 65(1). p.79-86

Mark

Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

TL Wu, J Franco, D Marcon, B De Jaeger, Benoit Bakeroot (UGent) , S Stoffels, M Van Hove, G Groeseneken and S Decoutere

(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(5). p.1853-1860

Mark

Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination

Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, Nicolo Ronchi, Andrea Natale Tallarico, Dirk Wellekens, Shuzhen You, Benoit Bakeroot (UGent) , Guido Groeseneken, et al.

(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(9). p.3451-3458

Mark

Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate

J Hu, S Stoffels, S Lenci, Benoit Bakeroot (UGent) , B De Jaeger, M Van Hove, N Ronchi, R Venegas, H Liang, M Zhao, et al.

(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(3). p.997-1004

Mark

TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

Rudolf Theoderich Bühler, Geert Eneman, Paola Favia, Liesbeth Johanna Witters, Benjamin Vincent, Andriy Hikavyy, Roger Loo, Hugo Bender, Nadine Collaert, Eddy Simoen (UGent) , et al.

(2015) IEEE TRANSACTIONS ON ELECTRON DEVICES. 62(4). p.1079-1084

Mark

Polyimide-enhanced stretchable interconnects: design, fabrication, and characterization

Yung-Yu Hsu, Mario Gonzalez, Frederick Bossuyt (UGent) , Jan Vanfleteren (UGent) and Ingrid De Wolf

(2011) IEEE TRANSACTIONS ON ELECTRON DEVICES. 58(8). p.2680-2688

Mark

Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies

Benoit Bakeroot (UGent) , Jan Doutreloigne (UGent) , Piet Vanmeerbeek and Peter Moens

(2008) IEEE TRANSACTIONS ON ELECTRON DEVICES. 55(1). p.435-445

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journalArticle
A1
open access

Realization of a four-electrode liquid crystal device with full in-plane director rotation

Chris Desimpel, Jeroen Beeckman (UGent) , Kristiaan Neyts (UGent) , Steven Verstuyft (UGent) , Dries Van Thourhout (UGent) , K D'HAVE and P RUDQUIST

(2007) IEEE TRANSACTIONS ON ELECTRON DEVICES. 54(6). p.1295-1300

Academic Bibliography

Investigation on carrier transport through AIN nucleation layer from differently doped Si(111) substrates

Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination

Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors

Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination

Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate

TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

Polyimide-enhanced stretchable interconnects: design, fabrication, and characterization

Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies

Realization of a four-electrode liquid crystal device with full in-plane director rotation

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