Ghent University Academic Bibliography

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Optimizing thin-film tandem solar cells : the impact of bandgap grading in ACIGS subcell on performance

Nour El I Boukortt (UGent) , Antonio Garcia Loureiro and Johan Lauwaert (UGent)

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(3). p.1197-1205
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- Journal Article
- A1
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Route toward commercially manufacturable vertical GaN devices

Karen Geens, M. Borga, M. A. Khan, W. Goncalez Filho, A. Vohra, S. Banerjee, K. J. Lee, U. Chatterjee, D. Cingu, Benoit Bakeroot (UGent) , et al.

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(3). p.1488-1493
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Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4563-4569
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Modeling the electrical degradation of micro-transfer printed 845 nm VCSILs for silicon photonics

Michele Zenari (UGent) , Matteo Buffolo, Carlo De Santi, Jeroen Goyvaerts, Alexander Grabowski, Johan Gustavsson, Roel Baets (UGent) , Anders Larsson, Günther Roelkens (UGent) , Gaudenzio Meneghesso, et al.

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(2). p.1131-1138
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Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.5949-5955
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Refined analysis of the correlated carrier number and mobility fluctuations mechanism in MOSFETs

Bogdan Cretu, Abderrahim Tahiat, Anabela Veloso and Eddy Simoen (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.5860-5866
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Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Wei-Syuan Lin, Benoit Bakeroot (UGent) , Zhen-Hong Huang, Ting-Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere and Tian-Li Wu

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4874-4878
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Monolithic 650-V dual-gate p-GaN bidirectional switch

Giulio Baratella (UGent) , U. Chatterjee, O. Syshchyk, M. Borga, E. Fabris, T. Cosnier, Benoit Bakeroot (UGent) and S. Decoutere

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(11). p.6904-6909
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Electrical stability of MOS structures with AlON and Al2O3 dielectrics deposited on n-and p-type GaN

Walter Gonçalez Filho (UGent) , Matteo Borga, Karen Geens, Md Arif Khan, Deepthi Cingu, Urmimala Chatterjee, Stefaan Decoutere, Werner Knaepen, Seda Kizir, Panagiota Arnou, et al.

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(9). p.5212-5217
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Upper subcell properties effects on 2T-perovskite/PERT C-Si tandem solar cell performance

Nour El I Boukortt (UGent) , Antonio Garcia Loureiro and Ahmad Abushattal

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.6166-6172

Academic Bibliography

Optimizing thin-film tandem solar cells : the impact of bandgap grading in ACIGS subcell on performance

Route toward commercially manufacturable vertical GaN devices

Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Modeling the electrical degradation of micro-transfer printed 845 nm VCSILs for silicon photonics

Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Refined analysis of the correlated carrier number and mobility fluctuations mechanism in MOSFETs

Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Monolithic 650-V dual-gate p-GaN bidirectional switch

Electrical stability of MOS structures with AlON and Al2O3 dielectrics deposited on n-and p-type GaN

Upper subcell properties effects on 2T-perovskite/PERT C-Si tandem solar cell performance

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