Ghent University Academic Bibliography

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Optimizing thin-film tandem solar cells : the impact of bandgap grading in ACIGS subcell on performance

Nour El I Boukortt (UGent) , Antonio Garcia Loureiro and Johan Lauwaert (UGent)

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(3). p.1197-1205
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- A1
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Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs

Mojtaba Alaei (UGent) , Herbert De Pauw (UGent) , Elena Fabris, Stefaan Decoutere, Jan Doutreloigne (UGent) , Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(9). p.4817-4823
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- A1
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Charge transport in GaN high electron mobility transistor with positive substrate bias

Peng Huang, Matthew D. Smith, Michael J. Uren, Zequan Chen, Benoit Bakeroot (UGent) , Anurag Vohra, Stefaan Decoutere and Martin Kuball

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(7). p.3483-3488
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1200-V dual-gate p-GaN bidirectional switches on 200-mm engineered substrates

Giulio Baratella (UGent) , U. Chatterjee, S. Kumar, M. Borga, K. Geens, A. Vohra, S. Decoutere and Benoit Bakeroot (UGent)

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(12). p.6574-6579
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Effect of traps in Si/SiGe NPN selectors for cross-point memory array architecture

Sandipta Roy, Taras Ravsher, Bhuvaneshwari Yengula Venkata Ramana, Loris Angelo Labbate, Andrea Fantini, Roger Loo (UGent) , Nathali A. Franchina Vergel, Praveen Dara, Clément Porret, Nico Jossart, et al.

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(11). p.5995-6000
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Upper subcell properties effects on 2T-perovskite/PERT C-Si tandem solar cell performance

Nour El I Boukortt (UGent) , Antonio Garcia Loureiro and Ahmad Abushattal

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.6166-6172
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Route toward commercially manufacturable vertical GaN devices

Karen Geens, M. Borga, M. A. Khan, W. Goncalez Filho, A. Vohra, S. Banerjee, K. J. Lee, U. Chatterjee, D. Cingu, Benoit Bakeroot (UGent) , et al.

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(3). p.1488-1493
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Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.5949-5955
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Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Wei-Syuan Lin, Benoit Bakeroot (UGent) , Zhen-Hong Huang, Ting-Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere and Tian-Li Wu

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4874-4878
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Refined analysis of the correlated carrier number and mobility fluctuations mechanism in MOSFETs

Bogdan Cretu, Abderrahim Tahiat, Anabela Veloso and Eddy Simoen (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.5860-5866

Academic Bibliography

Optimizing thin-film tandem solar cells : the impact of bandgap grading in ACIGS subcell on performance

Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs

Charge transport in GaN high electron mobility transistor with positive substrate bias

1200-V dual-gate p-GaN bidirectional switches on 200-mm engineered substrates

Effect of traps in Si/SiGe NPN selectors for cross-point memory array architecture

Upper subcell properties effects on 2T-perovskite/PERT C-Si tandem solar cell performance

Route toward commercially manufacturable vertical GaN devices

Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Refined analysis of the correlated carrier number and mobility fluctuations mechanism in MOSFETs

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