Ghent University Academic Bibliography

300mm fabrication of silicon quantum dot spin qubits using 0.33NA EUV lithography

S. Beyne, S. Kubicek, C. Godfrin, B. Raes, T. Van Caekenberghe, J. De Backer, Y. Hermans, F. Treska, S. Kaushik, Y. Jiang, et al.

(2025) 2025 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEDM. In IEEE International Electron Devices Meeting

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First systematic characterization of floating body effects in GAA nanosheet 3D DRAM access transistors

D. Garbin, G. Eneman, R. Ritzenthaler, N. Rassoul, P. Eyben, E. Canga, D. Matsubayashi, A. Fantini, B. O’Sullivan, L. A. Labbate, et al.

(2025) 2025 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEDM. In IEEE International Electron Devices Meeting

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Silicon photonics modulators and photodetectors for next-generation CPO and optical I/O

J. Van Campenhout, M. Kim, C. Coughlan, Amir Khaled Abdelhamid Mohamed Shahin (UGent) , Z. Ahmad, Cédric Bruynsteen (UGent) , Leandro Da Silva (UGent) , Nishant Singh (UGent) , D. Malik, G. Muliuk, et al.

(2025) 2025 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEDM. In IEEE International Electron Devices Meeting

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200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

T. Cosnier, O. Syshchyk, B. De Jaeger, K. Geens, D. Cingu, Elena Fabris, M. Borga, A. Vohra, M. Zhao, Benoit Bakeroot (UGent) , et al.

(2021) 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting

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GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion

X. Li, N; Amirifar, K. Geens, M. Zhao, W. Guo, H. Liang, S. You, N. Posthuma, B. De Jaeger, S. Stoffels, et al.

(2019) 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting

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Composition optimization and device understanding of Si-Ge-As-Te ovonic threshold switch selector with excellent endurance

D. Garbin, W. Devulder, R. Degraeve, G. L. Donadio, S. Clima, K. Opsomer, A. Fantini, D. Cellier, W. G. Kim, M. Pakala, et al.

(2019) 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting p.35.1.1-35.1.4

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Conference Paper
P1
open access

2D-3D integration of high-kappa dielectric with 2D heterostructures for opto-electronic applications

B. Terres, H. Agarwal, L. Orsini, A. Montanaro, V. Sorianello, Dries Van Thourhout (UGent) , K. Watanabe, T. Taniguchi, M. Romagnoli and F. H. L. Koppens

(2019) 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting p.33.5.1-33.5.4

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Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

M. Meneghini, A. Tajalli, P. Moens, A. Baneree, Arno Stockman, M. Tack, S. Gerardin, M. Bagatin, A. Paccagnella, E. Zanoni, et al.

(2017) 2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting

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Conference Paper
P1
open access

Reliable 50Gb/s silicon photonics platform for next-generation data center optical interconnects

P. Absil, K. Croes, A. Lesniewska, P. De Heyn, Y. Ban, B. Snyder, J. De Coster, F. Fodor, V. Simons, S. Balakrishnan, et al.

(2017) 2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting

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Conference Paper
P1
open access

Non-filamentary (VMCO) memory : a two- and three-dimensional study on switching and failure modes

U Celano, C Gastaldi, S Subhechha, B Govoreanu, G Donadio, A Franquet, T Ahmad, Christophe Detavernier (UGent) , O Richard, H Bender, et al.

(2017) 2017 IEEE international electron devices meeting (IEDM). In IEEE International Electron Devices Meeting

Academic Bibliography

300mm fabrication of silicon quantum dot spin qubits using 0.33NA EUV lithography

First systematic characterization of floating body effects in GAA nanosheet 3D DRAM access transistors

Silicon photonics modulators and photodetectors for next-generation CPO and optical I/O

200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion

Composition optimization and device understanding of Si-Ge-As-Te ovonic threshold switch selector with excellent endurance

2D-3D integration of high-kappa dielectric with 2D heterostructures for opto-electronic applications

Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

Reliable 50Gb/s silicon photonics platform for next-generation data center optical interconnects

Non-filamentary (VMCO) memory : a two- and three-dimensional study on switching and failure modes

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