Ghent University Academic Bibliography

1.2 kV enhancement-mode p-GaN gate HEMTs on 200 mm engineered substrates

S. Kumar, K. Geens, A. Vohra, D. Wellekens, D. Cingu, E. Fabris, T. Cosnier, H. Hahn, Benoit Bakeroot (UGent) , N. Posthuma, et al.

(2024) IEEE ELECTRON DEVICE LETTERS. 45(4). p.657-660

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P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

A. N. Tallarico, M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi and C. Fiegna

(2024) IEEE ELECTRON DEVICE LETTERS. 45(9). p.1630-1633

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High threshold voltage enhancement-mode regrown p-GaN gate HEMTs with a robust forward time-dependent gate breakdown stability

Shun-Wei Tang, Zhen-Hong Huang, Szu-Chia Chen, Wei-Syuan Lin, Brice de Jaeger, Dirk Wellekens, Matteo Borga, Benoit Bakeroot (UGent) , Stefaan Decoutere and Tian-Li Wu

(2022) IEEE ELECTRON DEVICE LETTERS. 43(10). p.1625-1628

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The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs

M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna and A. N. Tallarico

(2022) IEEE ELECTRON DEVICE LETTERS. 43(11). p.1846-1849

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Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors

Filip Wach, Michael J. Uren, Benoit Bakeroot (UGent) , Ming Zhao, Stefaan Decoutere and Martin Kuball

(2020) IEEE ELECTRON DEVICE LETTERS. 41(12). p.1754-1757

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Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization

Xiangdong Li, Benoit Bakeroot (UGent) , Zhicheng Wu, Nooshin Amirifar, Shuzhen You, Niels Posthuma, Ming Zhao, Hu Liang, Guido Groeseneken and Stefaan Decoutere

(2020) IEEE ELECTRON DEVICE LETTERS. 41(4). p.577-580

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The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

Ben Rackauskas, Michael J. Uren, Steve Stoffels, Ming Zhao, Benoit Bakeroot (UGent) , Stefaan Decoutere and Martin Kuball

(2018) IEEE ELECTRON DEVICE LETTERS. 39(10). p.1580-1583

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Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

Jie Hu, Steve Stoffels, Ming Zhao, Andrea Natale Tallarico, Isabella Rossetto, Matteo Meneghini, Xuanwu Kang, Benoit Bakeroot (UGent) , Denis Marcon, Ben Kaczer, et al.

(2017) IEEE ELECTRON DEVICE LETTERS. 38(3). p.371-374

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Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Tian-Li Wu, Benoit Bakeroot (UGent) , Hu Liang, Niels Posthuma, Shuzhen You, Nicolo Ronchi, Steve Stoffels, Denis Marcon and Stefaan Decoutere

(2017) IEEE ELECTRON DEVICE LETTERS. 38(12). p.1696-1699

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Forward bias gate breakdown mechanism in enhancement-mode p-GaN Gate AlGaN/GaN high-electron mobility transistors

Tian-Li Wu, Denis Marcon, Shuzhen You, Niels Posthuma, Benoit Bakeroot (UGent) , Steve Stoffels, Marleen Van Hove, Guido Groeseneken and Stefaan Decoutere

(2015) IEEE ELECTRON DEVICE LETTERS. 36(10). p.1001-1003

Academic Bibliography

1.2 kV enhancement-mode p-GaN gate HEMTs on 200 mm engineered substrates

P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

High threshold voltage enhancement-mode regrown p-GaN gate HEMTs with a robust forward time-dependent gate breakdown stability

The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs

Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors

Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization

The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Forward bias gate breakdown mechanism in enhancement-mode p-GaN Gate AlGaN/GaN high-electron mobility transistors

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