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TaN/Ta as an effective diffusion barrier for direct contact of copper and NiSi
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Effective Schottky Barrier height modulation by an ultrathin passivation layer of GeOxNy for Al/n-Ge(100) contact
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- Journal Article
- A1
- open access
Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma
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- Journal Article
- A1
- open access
TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer
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- Journal Article
- A1
- open access
Die-to-die adhesive bonding procedure for evanescently-coupled photonic devices
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Epitaxial formation of a metastable hexagonal nickel-silicide
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Role of gold adatoms in the stability and electrochemical behavior of gold surfaces modified with phthalocyanines