Ghent University Academic Bibliography

Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Roger Loo (UGent) , Anjani Akula, Yosuke Shimura, Clement Porret, Erik Rosseel, Thomas Dursap, Andriy Yakovitch Hikavyy, Matteo Beggiato, Janusz Bogdanowicz, Alex Merkulov, et al.

(2024) ECS TRANSACTIONS. 114(2). p.15-28

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Source/drain epitaxy for nanosheet-based CFET devices

Erik Rosseel, Clement Porret, Thomas Dursap, Roger Loo (UGent) , Hans Mertens, Jishnu Ganguly, Ritam Sarkar, Camila Cavalcante, Olivier Richard, Jef Geypen, et al.

(2024) ECS TRANSACTIONS. 114(2). p.29-36

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Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities

Bogdan Cretu, Beya Nafaa, Eddy Simoen (UGent) , Geert Hellings, Dimitri Linten and Cor Claeys

(2020) ECS Transactions. 97(5). p.45-51

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A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

P-C Hsu, Eddy Simoen (UGent) , D Lin, A Stesmans, L Goux, R Delhougne and GS Kar

(2019) ECS Transactions. 92(1). p.45-55

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Electrical activity of extended defects in III-V semiconductors

Eddy Simoen (UGent) , P-C Hsu, Yves Mols, Bernardette Kunert, Robert Langer, Clement Merckling, AliReza Alian, Niamh Waldron, Geert Eneman, Nadine Collaert, et al.

(2019) ECS Transactions. 92(4). p.21-31

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Electrically active defects in plated crystalline silicon n⁺p solar cells : a DLTS perspective

Eddy Simoen (UGent) , Chi Dang, Riet Labie and Jef Poortmans

(2018) HIGH PURITY AND HIGH MOBILITY SEMICONDUCTORS 15. In ECS Transactions 86(10). p.137-146

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Journal Article
A2
open access

Atomic layer deposition of nanoalloys of noble and non-noble metals

Ranjith Karuparambil Ramachandran (UGent) , Jolien Dendooven (UGent) , Matthias Filez (UGent) , Vladimir Galvita (UGent) , Hilde Poelman (UGent) , Eduardo Solano Minuesa (UGent) , Matthias Minjauw (UGent) , Guy Marin (UGent) and Christophe Detavernier (UGent)

(2017) ECS TRANSACTIONS. 80(3). p.97-103

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Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots

Mansour Aouassa, Henk Vrielinck (UGent) and Eddy Simoen (UGent)

(2017) SEMICONDUCTOR PROCESS INTEGRATION 10. In ECS Transactions 80(4). p.181-190

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Book Editor

Atomic layer deposition applications 13

Fred Roozeboom, Stefan De Gendt, Jeffrey Elam, Oscar van der Straten, Jolien Dendooven (UGent) and Chanyuan Liu

(2017) In ECS Transactions 80 (3).

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Substitutional carbon loss in Si:C stressor layers probed by deep-level transient spectroscopy

Eddy Simoen (UGent) , Sathish Kumar Dhayalan, Andriy Yakovitch Hikavyy, Roger Loo, Erik Rosseel, Henk Vrielinck (UGent) and Johan Lauwaert (UGent)

(2016) ECS Transactions. 75(4). p.3-11

Academic Bibliography

Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Source/drain epitaxy for nanosheet-based CFET devices

Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities

A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

Electrical activity of extended defects in III-V semiconductors

Electrically active defects in plated crystalline silicon n⁺p solar cells : a DLTS perspective

Atomic layer deposition of nanoalloys of noble and non-noble metals

Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots

Atomic layer deposition applications 13

Substitutional carbon loss in Si:C stressor layers probed by deep-level transient spectroscopy

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