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Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers
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A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
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- Journal Article
- A1
- open access
Low-frequency noise assessment of work function engineering cap layers in high-k gate stacks
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- Journal Article
- A1
- open access
On the evolution of strain and electrical properties in As-grown and annealed Si:P epitaxial films for source-drain stressor applications
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Non-isothermal modeling of dark current-voltage measurements of a CIGS solar cell
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- Journal Article
- A1
- open access
Microscopic study of dopant distribution in europium doped SrGa2S4 : impact on thermal quenching and phosphor performance
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- Journal Article
- A1
- open access
Local, temperature-dependent trapping and detrapping in the LiGa5O8:Cr infrared emitting persistent phosphor
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- Journal Article
- A1
- open access
Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots
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Transfer printing of micron-size graphene for photonic integrated circuits and devices
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- Journal Article
- A1
- open access
Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy
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Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties
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Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices
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- Journal Article
- A1
- open access
Determination of majority carrier capture rates via deep level transient spectroscopy
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- Journal Article
- A1
- open access
Luminescent behavior of the K2SiF6:Mn4+ red phosphor at high fluxes and at the microscopic level
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Deep levels in W-doped Czochralski silicon
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- Journal Article
- A1
- open access
Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers
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- Journal Article
- A1
- open access
A statistical model describing temperature dependent gettering of Cu in p-type Si
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- Journal Article
- A1
- open access
Modification of ultra low-k dielectric films by O₂ and CO₂ plasmas
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Silicon single crystal growth from a melt: on the impact of dopants on the v/G criterion
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Formation energy of intrinsic point defects in Si and Ge and implications for Ge crystal growth