Ghent University Academic Bibliography

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Characterization of broadband complex refractive index of synthetic melanin coatings and their changes after ultraviolet irradiation

Weiyao Li, Anvay Patil, Xuhao Zhou, Zhao Wang, Ming Xiao, Matthew Shawkey (UGent) , Nathan C. Gianneschi and Ali Dhinojwala

(2020) Applied Physics Letters.
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Variation in guided streamer propagation along a DBD plasma jet by tailoring the applied voltage waveform

M. E. Pinchuk, O. M. Stepanova, Mikhail Gromov (UGent) , Christophe Leys (UGent) and Anton Nikiforov (UGent)

(2020) APPLIED PHYSICS LETTERS. 116.
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Sputter deposition of porous thin films from metal/NaCl powder targets

Robin Dedoncker (UGent) , Hannes Rijckaert (UGent) and Diederik Depla (UGent)

(2019) APPLIED PHYSICS LETTERS. 115(4).
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Electrical properties of extended defects in strain relaxed GeSn

Somya Gupta, Eddy Simoen (UGent) , Roger Loo, Yosuke Shimura, Clement Porret, Federica Gencarelli, Kristof Paredis, Hugo Bender, Johan Lauwaert (UGent) , Henk Vrielinck (UGent) , et al.

(2018) APPLIED PHYSICS LETTERS. 113(2).
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Impurity dominated thin film growth

Florian Cougnon (UGent) , Dulmaa Altangerel (UGent) , Robin Dedoncker (UGent) , R Galbadrakh and Diederik Depla (UGent)

(2018) APPLIED PHYSICS LETTERS. 112(22).
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Electrically assisted bandedge mode selection of photonic crystal lasing in chiral nematic liquid crystals

Chun-Ta Wang (UGent) , Chun-Wei Chen, Tzu-Hsuan Yang, Inge Nys (UGent) , Cheng-Chang Li, Tsung-Hsien Lin, Kristiaan Neyts (UGent) and Jeroen Beeckman (UGent)

(2018) APPLIED PHYSICS LETTERS. 112(4).
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Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si

Srinivasan Ashwyn Srinivasan (UGent) , C. Porret, M. Pantouvaki, Y. Shimura, Pieter Geiregat (UGent) , R. Loo, J. Van Campenhout and Dries Van Thourhout (UGent)

(2018) APPLIED PHYSICS LETTERS. 113(16). p.1-5
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Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra

S Gupta, Eddy Simoen (UGent) , R Loo, Q Smets, AS Verhulst, Johan Lauwaert (UGent) , Henk Vrielinck (UGent) and M Heyns

(2018) APPLIED PHYSICS LETTERS. 113(23).
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Low driving voltage band-filling-based III-V-on-silicon electroabsorption modulator

QS Huang, YC Wu, KQ Ma, JH Zhang, Weiqiang Xie (UGent) , Xin Fu, YC Shi, KX Chen, JJ He, Dries Van Thourhout (UGent) , et al.

(2016) APPLIED PHYSICS LETTERS. 108(14).
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The existence of a double S-shaped process curve during reactive magnetron sputtering

Roeland Schelfhout (UGent) , Koen Strijckmans (UGent) and Diederik Depla (UGent)

(2016) APPLIED PHYSICS LETTERS. 109(11).

Academic Bibliography

Characterization of broadband complex refractive index of synthetic melanin coatings and their changes after ultraviolet irradiation

Variation in guided streamer propagation along a DBD plasma jet by tailoring the applied voltage waveform

Sputter deposition of porous thin films from metal/NaCl powder targets

Electrical properties of extended defects in strain relaxed GeSn

Impurity dominated thin film growth

Electrically assisted bandedge mode selection of photonic crystal lasing in chiral nematic liquid crystals

Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si

Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra

Low driving voltage band-filling-based III-V-on-silicon electroabsorption modulator

The existence of a double S-shaped process curve during reactive magnetron sputtering

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