Ghent University Academic Bibliography

Show Sort by

Your filters: cql: parent exact "APPLIED PHYSICS LETTERS"

Mark
Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si

Srinivasan Ashwyn Srinivasan (UGent) , C. Porret, M. Pantouvaki, Y. Shimura, Pieter Geiregat (UGent) , R. Loo, J. Van Campenhout and Dries Van Thourhout (UGent)

(2018) APPLIED PHYSICS LETTERS. 113(16). p.1-5
Mark
Electrical properties of extended defects in strain relaxed GeSn

Somya Gupta, Eddy Simoen (UGent) , Roger Loo, Yosuke Shimura, Clement Porret, Federica Gencarelli, Kristof Paredis, Hugo Bender, Johan Lauwaert (UGent) , Henk Vrielinck (UGent) , et al.

(2018) APPLIED PHYSICS LETTERS. 113(2).
Mark
Impurity dominated thin film growth

Florian Cougnon (UGent) , Dulmaa Altangerel (UGent) , Robin Dedoncker (UGent) , R Galbadrakh and Diederik Depla (UGent)

(2018) APPLIED PHYSICS LETTERS. 112(22).
Mark
- journalArticle
- A1
- open access
Low driving voltage band-filling-based III-V-on-silicon electroabsorption modulator

QS Huang, YC Wu, KQ Ma, JH Zhang, Weiqiang Xie (UGent) , Xin Fu, YC Shi, KX Chen, JJ He, Dries Van Thourhout (UGent) , et al.

(2016) APPLIED PHYSICS LETTERS. 108(14).
Mark
- journalArticle
- A1
- open access
The existence of a double S-shaped process curve during reactive magnetron sputtering

Roeland Schelfhout (UGent) , Koen Strijckmans (UGent) and Diederik Depla (UGent)

(2016) APPLIED PHYSICS LETTERS. 109(11).
Mark
- journalArticle
- A1
- open access
Extraction of carrier lifetime in Ge waveguides using pump probe spectroscopy

Srinivasan Ashwyn Srinivasan (UGent) , M Pantouvaki, P Verheyen, G Lepage, P Absil, J Van Campenhout and Dries Van Thourhout (UGent)

(2016) APPLIED PHYSICS LETTERS. 108(21).
Mark
- journalArticle
- A1
- open access
III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

B Kunert, W Guo, Y Mols, Bin Tian (UGent) , Zhechao Wang (UGent) , Yuting Shi (UGent) , Dries Van Thourhout (UGent) , M Pantouvaki, J Van Campenhout, R Langer, et al.

(2016) APPLIED PHYSICS LETTERS. 109(9). p.1-5
Mark
- journalArticle
- A1
- open access
Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films

Murad Redzheb (UGent) , Lutz Prager, Sergej Naumov, Mikhail Krishtab, Silvia Armini, Pascal Van Der Voort (UGent) and Mikhail R Baklanov

(2016) APPLIED PHYSICS LETTERS. 108(1).
Mark
Thermal magnetic noise spectra of nanoparticle ensembles

Jonathan Leliaert (UGent) , Annelies Coene (UGent) , Maik Liebl, Dietmar Eberbeck, Uwe Steinhoff, Frank Wiekhorst, Birgit Fischer, Luc Dupré (UGent) and Bartel Van Waeyenberge (UGent)

(2015) APPLIED PHYSICS LETTERS. 107(22).
Mark
Dynamic domain wall chirality rectification by rotating magnetic fields

Andre Bisig, Mohamad-Assaad Mawass, Martin Stärk, Christoforos Moutafis, Jan Rhensius, Jakoba Heidler, Sebastian Gliga, Markus Weigand, Tolek Tyliszczak, Bartel Van Waeyenberge (UGent) , et al.

(2015) APPLIED PHYSICS LETTERS. 106(12).

Academic Bibliography

Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si

Electrical properties of extended defects in strain relaxed GeSn

Impurity dominated thin film growth

Low driving voltage band-filling-based III-V-on-silicon electroabsorption modulator

The existence of a double S-shaped process curve during reactive magnetron sputtering

Extraction of carrier lifetime in Ge waveguides using pump probe spectroscopy

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films

Thermal magnetic noise spectra of nanoparticle ensembles

Dynamic domain wall chirality rectification by rotating magnetic fields

Contents

Support

Contact