Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Download search results Subscribe to news feed Your filters: cql: parent exact "2011 IEEE International electron devices meeting (IEDM)" Add to list Conference Paper P1 Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance P Srivastava, H Oprins, M Van Hove, J Das, PE Malinowski, Benoit Bakeroot (UGent) , D Marcon, D Visalli, X Kang, S Lenci, et al. (2011) 2011 IEEE International electron devices meeting (IEDM).