Ghent University Academic Bibliography

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High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps

D. Favero, A. Cavaliere, C. De Santi, M. Borga, Walter Gonçalez Filho (UGent) , K. Geens, Benoit Bakeroot (UGent) , S. Decoutere, G. Meneghesso, E. Zanoni, et al.

(2023) 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS. In International reliability physics symposium
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- Journal Article
- A1
- open access
Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization

Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Karen Geens, Shuzhen You, Benoit Bakeroot (UGent) , Stefaan Decoutere, Patrick Diehle, Susanne Huebner, Frank Altmann, et al.

(2021) MATERIALS. 14(9).
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Demonstration of bilayer gate insulator for improved reliability in GaN-on-Si vertical transistors

Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot (UGent) and Stefaan Decoutere

(2020) 2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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- Journal Article
- A1
- open access
Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability

Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot (UGent) , Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini

(2020) MATERIALS. 13(21).

Academic Bibliography

High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps

Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization

Demonstration of bilayer gate insulator for improved reliability in GaN-on-Si vertical transistors

Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability

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