Ghent University Academic Bibliography

Journal Article
A1
open access

Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Liad Tadmor, Sofie Vandenbroucke (UGent) , Eldad Bahat Treidel, Enrico Brusaterra, Paul Plate, Nicole Volkmer, Frank Brunner, Christophe Detavernier (UGent) , Joachim Wurfl and Oliver Hilt

(2024) JOURNAL OF APPLIED PHYSICS. 135(8).

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Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology

Jethro Oroceo Gallardo, Brice De Jaeger, Sachidananda Dash, Shun-Wei Tang, Thanh Nga Tran, Dirk Wellekens, Benoit Bakeroot (UGent) , Stefaan Decoutere and Tian-Li Wu

(2021) 2021 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA). In IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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A new frontier of printed electronics : flexible hybrid electronics

Yasser Khan, Arno Thielens (UGent) , Sifat Muin, Jonathan Ting, Carol Baumbauer and Ana C. Arias

(2020) ADVANCED MATERIALS. 32(15).

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Conference Paper
C1
open access

A four-quadrant switched capacitor DC-DC convertor enabling power-efficient lab-grade potentiostats

Matthias Swiggers, Tim Tielemans, Tom Molderez, Marian Verhelst and Filip Tavernier

(2020) 2020 IEEE 20th Mediterranean Electrotechnical Conference (MELECON). In IEEE Mediterranean Electrotechnical Conference p.658-664

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Boosting room-temperature magneto-ionics in a non-magnetic oxide semiconductor

Julius de Rojas, Alberto Quintana, Aitor Lopeandia, Joaquin Salguero, Jose L. Costa-Kramer, Llibertat Abad, Maciej O. Liedke, Maik Butterling, Andreas Wagner, Lowie Henderick (UGent) , et al.

(2020) ADVANCED FUNCTIONAL MATERIALS. 30(36).

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MoO3 induces p-type surface conductivity by surface transfer doping in diamond

Kaijian Xing, Yang Xiang, Ming Jiang, Daniel L Creedon, Golrokh Akhgar, Steve A Yianni, Haiyan Xiao, Lothar Ley, Alastair Stacey, Jeffrey C McCallum, et al.

(2020) APPLIED SURFACE SCIENCE. 509.

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Journal Article
A1
open access

Micro-Transfer-Printing of Al2O3-Capped Short-Wave-Infrared PbS Quantum Dot Photoconductors

Nayyera Mahmoud, Willem Walravens (UGent) , Jakob Kuhs (UGent) , Christophe Detavernier (UGent) , Zeger Hens (UGent) and Günther Roelkens (UGent)

(2019) ACS APPLIED NANO MATERIALS. 2(1). p.299-306

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Localized optical-quality doping of graphene on silicon waveguides through a TFSA-containing polymer matrix

Lara Misseeuw (UGent) , Tymoteusz Ciuk, Aleksandra Krajewska, Iwona Pasternak, Wlodek Strupinski, Benjamin Feigel, Mulham Khoder, Isabel Van Driessche (UGent) , Juergen Van Erps, Sandra Van Vlierberghe (UGent) , et al.

(2018) JOURNAL OF MATERIALS CHEMISTRY C. 6(40). p.10739-10750

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Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs

N. Ronchi, Benoit Bakeroot (UGent) , S. You, J. Hu, S. Stoffels, T.-L. Wu, B. De Jaeger and S. Decoutere

(2017) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 214(3).

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Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate

J Hu, S Stoffels, S Lenci, Benoit Bakeroot (UGent) , B De Jaeger, M Van Hove, N Ronchi, R Venegas, H Liang, M Zhao, et al.

(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(3). p.997-1004

Academic Bibliography

Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology

A new frontier of printed electronics : flexible hybrid electronics

A four-quadrant switched capacitor DC-DC convertor enabling power-efficient lab-grade potentiostats

Boosting room-temperature magneto-ionics in a non-magnetic oxide semiconductor

MoO3 induces p-type surface conductivity by surface transfer doping in diamond

Micro-Transfer-Printing of Al2O3-Capped Short-Wave-Infrared PbS Quantum Dot Photoconductors

Localized optical-quality doping of graphene on silicon waveguides through a TFSA-containing polymer matrix

Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs

Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate

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