Ghent University Academic Bibliography

Journal Article
A1
open access

Integrated PbS colloidal quantum dot photodiodes on silicon nitride waveguides

Chao Pang (UGent) , Yuhao Deng (UGent) , Ezat Kheradmand (UGent) , Nithin Poonkottil (UGent) , Robin Petit (UGent) , Lukas Elsinger, Christophe Detavernier (UGent) , Pieter Geiregat (UGent) , Zeger Hens (UGent) and Dries Van Thourhout (UGent)

(2023) ACS PHOTONICS. 10(12). p.4215-4224

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Conference Paper
P1
open access

Received signal strength visible light positioning-based precision drone landing system

Sander Bastiaens, Jens Mommerency, Kenneth Deprez (UGent) , Wout Joseph (UGent) and David Plets (UGent)

(2021) 2021 International Conference on Indoor Positioning and Indoor Navigation (IPIN). In International Conference on Indoor Positioning and Indoor Navigation

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Journal Article
A1
open access

Impact of a photodiode's angular characteristics on RSS-based VLP accuracy

Sander Bastiaens, Willem Raes, Nobby Stevens, Luc Martens (UGent) , Wout Joseph (UGent) and David Plets (UGent)

(2020) IEEE ACCESS. 8. p.83116-83130

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Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride photonic integrated circuits

Jeroen Goyvaerts, Sulakshna Kumari (UGent) , Sarah Uvin (UGent) , Jing Zhang (UGent) , Roel Baets (UGent) , Agnieszka Gocalinska, Emanuele Pelucchi, Brian Corbett and Günther Roelkens (UGent)

(2020) 2020 IEEE Photonics Conference (IPC). In IEEE Photonics Conference

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New photodiode responsivity model for RSS-based VLP

Sander Bastiaens, Willem Raes, Nobby Stevens, Wout Joseph (UGent) and David Plets (UGent)

(2019) 2019 Global LIFI Congress (GLC).

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NIR sensors based on photolithographically patterned PbS QD photodiodes for CMOS integration

Epimitheas Georgitzikis, Pawel E. Malinowski, Luis Moreno Hagelsieb, Vladimir Pejovic, Griet Uytterhoeven, Stefano Guerrieri, Andreas Suss, Celso Cavaco, Konstantinos Chatzinis, Jorick Maes, et al.

(2018) 2018 IEEE SENSORS. In IEEE Sensors p.508-511

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Journal Article
A1
open access

100-Gbps RZ data reception in 67-GHz Si-contacted germanium waveguide p-i-n photodetectors

Hongtao Chen (UGent) , M. Galili, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, S. Balakrishnan, P. Absil, L. Oxenlowe, J. Van Campenhout, et al.

(2017) JOURNAL OF LIGHTWAVE TECHNOLOGY. 35(4). p.722-726

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Journal Article
A1
open access

-1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

Hongtao Chen (UGent) , P Verheyen, P De Heyn, G Lepage, J De Coster, S Balakrishnan, P Absil, W Yao, L Shen, Günther Roelkens (UGent) , et al.

(2016) OPTICS EXPRESS. 24(5). p.4622-4631

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Conference Paper
P1
open access

-1 V bias 56 Gbps germanium waveguide p-i-n photodetector with silicon contacts

Hongtao Chen (UGent) , P Verheyen, P De Heyn, G Lepage, J De Coster, P Absil, Günther Roelkens (UGent) and J Van Campenhout

(2016) 2016 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC).

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Ultrathin optoelectronic device packaging in flexible carriers

Erwin Bosman (UGent) , Jeroen Missinne (UGent) , Bram Van Hoe (UGent) , Geert Van Steenberge (UGent) , Sandeep Kalathimekkad (UGent) , Jurgen Van Erps, Ivaylo Milenkov, Krassimir Panajotov, Tim Van Gijseghem (UGent) , Peter Dubruel (UGent) , et al.

(2011) IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. 17(3). p.617-628

Academic Bibliography

Integrated PbS colloidal quantum dot photodiodes on silicon nitride waveguides

Received signal strength visible light positioning-based precision drone landing system

Impact of a photodiode's angular characteristics on RSS-based VLP accuracy

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride photonic integrated circuits

New photodiode responsivity model for RSS-based VLP

NIR sensors based on photolithographically patterned PbS QD photodiodes for CMOS integration

100-Gbps RZ data reception in 67-GHz Si-contacted germanium waveguide p-i-n photodetectors

-1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

-1 V bias 56 Gbps germanium waveguide p-i-n photodetector with silicon contacts

Ultrathin optoelectronic device packaging in flexible carriers

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