Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Download search results Subscribe to news feed Your filters: cql: keyword exact "p-GaN HEMT" Add to list Journal Article A1 Gate reliability of p-GaN HEMT with gate metal retraction A. N. Tallarico, S. Stoffels, N. Posthuma, Benoit Bakeroot (UGent) , S. Decoutere, E. Sangiorgi and C. Fiegna (2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(11). p.4829-4835