Ghent University Academic Bibliography

Your filters: cql: keyword exact "Wide band gap semiconductors"

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Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4563-4569
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Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.5949-5955
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Frontiers in low-frequency noise research in advanced semiconductor devices

Eddy Simoen (UGent) , Anabela Veloso, Barry O'Sullivan, Kenichiro Takakura and Cor Claeys

(2021) 2021 China Semiconductor Technology International Conference (CSTIC).
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Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

M. Millesimo, N. Posthuma, Benoit Bakeroot (UGent) , M. Borga, S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 21(1). p.57-63
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Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides

TJ Karle, Yacine Halioua, F Raineri, P Monnier, R Braive, L Le Gratiet, G Beaudoin, I Sagnes, Günther Roelkens (UGent) , Frederik Van Laere, et al.

(2010) JOURNAL OF APPLIED PHYSICS. 107(6).

Academic Bibliography

Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Frontiers in low-frequency noise research in advanced semiconductor devices

Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides

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