Ghent University Academic Bibliography

Journal Article
A1
open access

A 64-GHz optical receiver for 128-GBd links using a 55-nm SiGe BiCMOS traveling-wave linear transimpedance amplifier

Jakob Declercq (UGent) , Bart Moeneclaey (UGent) , Joris Lambrecht (UGent) , Cédric Bruynsteen (UGent) , Nishant Singh (UGent) , Shengpu Niu (UGent) , Peter Ossieur (UGent) and Xin Yin (UGent)

(2025) JOURNAL OF LIGHTWAVE TECHNOLOGY. 43(9). p.4139-4148

Add to list

Process insights into 3D-DRAM with vertical bit line and scalable GAA transistor

N. Rassoul, L. A. Labbate, G. Eneman, A. Fantini, R. Ritzenthaler, J. Loyo Prado, Roger Loo (UGent) , Wouter Devulder (UGent) , E. Dupuy, T. Peissker, et al.

(2025) 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).

Add to list

Source/drain epitaxy and contacts for CFET applications

Clement Porret, Thomas Dursap, Anjani Akula, Erik Rosseel, Bert Pollefliet, Jean-Luc Everaert, Kiroubanand Sankaran, Alex Merkulov, Keisuke Yamamoto, Paola Favia, et al.

(2025) 22nd International Workshop on Junction Technology 2025 (IWJT). p.47-50

Add to list

Journal Article
A1
open access

Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Liad Tadmor, Sofie Vandenbroucke (UGent) , Eldad Bahat Treidel, Enrico Brusaterra, Paul Plate, Nicole Volkmer, Frank Brunner, Christophe Detavernier (UGent) , Joachim Wurfl and Oliver Hilt

(2024) JOURNAL OF APPLIED PHYSICS. 135(8).

Add to list

Effect of temperature dependence of 2DEG on device characteristics of field-plated recessed-gate III-nitride/β-Ga2O3 nano-HEMT

G. Purnachandra Rao, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen, Nour El I Boukortt (UGent) and Giovanni Crupi

(2024) INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS. 37(4).

Add to list

Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology

Jethro Oroceo Gallardo, Brice De Jaeger, Sachidananda Dash, Shun-Wei Tang, Thanh Nga Tran, Dirk Wellekens, Benoit Bakeroot (UGent) , Stefaan Decoutere and Tian-Li Wu

(2021) 2021 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA). In IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

Add to list

MoO3 induces p-type surface conductivity by surface transfer doping in diamond

Kaijian Xing, Yang Xiang, Ming Jiang, Daniel L Creedon, Golrokh Akhgar, Steve A Yianni, Haiyan Xiao, Lothar Ley, Alastair Stacey, Jeffrey C McCallum, et al.

(2020) APPLIED SURFACE SCIENCE. 509.

Add to list

Boosting room-temperature magneto-ionics in a non-magnetic oxide semiconductor

Julius de Rojas, Alberto Quintana, Aitor Lopeandia, Joaquin Salguero, Jose L. Costa-Kramer, Llibertat Abad, Maciej O. Liedke, Maik Butterling, Andreas Wagner, Lowie Henderick (UGent) , et al.

(2020) ADVANCED FUNCTIONAL MATERIALS. 30(36).

Add to list

A new frontier of printed electronics : flexible hybrid electronics

Yasser Khan, Arno Thielens (UGent) , Sifat Muin, Jonathan Ting, Carol Baumbauer and Ana C. Arias

(2020) ADVANCED MATERIALS. 32(15).

Add to list

Conference Paper
P1
open access

A four-quadrant switched capacitor DC-DC convertor enabling power-efficient lab-grade potentiostats

Matthias Swiggers, Tim Tielemans, Tom Molderez, Marian Verhelst and Filip Tavernier

(2020) 20TH IEEE MEDITERRANEAN ELETROTECHNICAL CONFERENCE (IEEE MELECON 2020). In IEEE Mediterranean Electrotechnical Conference p.658-664

Academic Bibliography

A 64-GHz optical receiver for 128-GBd links using a 55-nm SiGe BiCMOS traveling-wave linear transimpedance amplifier

Process insights into 3D-DRAM with vertical bit line and scalable GAA transistor

Source/drain epitaxy and contacts for CFET applications

Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Effect of temperature dependence of 2DEG on device characteristics of field-plated recessed-gate III-nitride/β-Ga2O3 nano-HEMT

Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology

MoO3 induces p-type surface conductivity by surface transfer doping in diamond

Boosting room-temperature magneto-ionics in a non-magnetic oxide semiconductor

A new frontier of printed electronics : flexible hybrid electronics

A four-quadrant switched capacitor DC-DC convertor enabling power-efficient lab-grade potentiostats

Contents

Support

Contact