Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Download search results Subscribe to news feed Your filters: cql: keyword exact "PBTI" Add to list Journal Article A1 open access Using gate leakage conduction to understand positive gate bias induced threshold voltage shift in p-GaN gate HEMTs Shun-Wei Tang, Benoit Bakeroot (UGent) , Zhen-Hong Huang, Szu-Chia Chen, Wei-Syuan Lin, Ting-Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere, et al. (2023) IEEE TRANSACTIONS ON ELECTRON DEVICES. 70(2). p.449-453 Add to list Conference Paper P1 High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps D. Favero, A. Cavaliere, C. De Santi, M. Borga, Walter Gonçalez Filho (UGent) , K. Geens, Benoit Bakeroot (UGent) , S. Decoutere, G. Meneghesso, E. Zanoni, et al. (2023) 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS. In International reliability physics symposium Add to list Journal Article A1 Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs N. Modolo, M. Fregolent, F. Masin, A. Benato, A. Bettini, M. Buffolo, C. De Santi, M. Borga, N. Posthuma, Benoit Bakeroot (UGent) , et al. (2022) MICROELECTRONICS RELIABILITY. 138. Add to list Journal Article A1 open access Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization Xiangdong Li, Benoit Bakeroot (UGent) , Zhicheng Wu, Nooshin Amirifar, Shuzhen You, Niels Posthuma, Ming Zhao, Hu Liang, Guido Groeseneken and Stefaan Decoutere (2020) IEEE ELECTRON DEVICE LETTERS. 41(4). p.577-580