Ghent University Academic Bibliography

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Ge-on-insulator fabrication based on Ge-on-nothing technology

Keisuke Yamamoto, Dong Wang, Roger Loo (UGent) , Clément Porret, Jinyoun Cho, Kristof Dessein and Valérie Depauw

(2024) JAPANESE JOURNAL OF APPLIED PHYSICS. 63(4).

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Refined DC and low-frequency noise characterization at room and cryogenic temperatures of vertically stacked silicon nanosheet FETs

Bogdan Cretu, Anabela Veloso and Eddy Simoen (UGent)

(2023) IEEE TRANSACTIONS ON ELECTRON DEVICES. 70(1). p.254-260

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Exploration of gate trench module for vertical GaN devices

M. Ruzzarin, K. Geens, M. Borga, H. Liang, S. You, Benoit Bakeroot (UGent) , S. Decoutere, C. De Santi, A. Neviani, M. Meneghini, et al.

(2020) MICROELECTRONICS RELIABILITY. 114(SI).

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Low-frequency noise assessment of work function engineering cap layers in high-k gate stacks

C Claeys, R Ritzenthaler, T Schram, H Arimura, N Horiguchi and Eddy Simoen (UGent)

(2019) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 8(2). p.N25-N31

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Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors : physical interpretation of transport phenomena

B Nafaa, B Cretu, N Ismail, O Touayar, R Carin, Eddy Simoen (UGent) and A Veloso

(2018) SOLID-STATE ELECTRONICS. 150. p.1-7

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Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on heteroepitaxial GeSn

Somya Gupta, Eddy Simoen (UGent) , Roger Loo, Oreste Madia, Dennis Lin, Clement Merckling, Yosuke Shimura, Thierry Conard, Johan Lauwaert (UGent) , Henk Vrielinck (UGent) , et al.

(2016) ACS APPLIED MATERIALS & INTERFACES. 8(21). p.13181-13186

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Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs

Eddy Simoen (UGent) , Bogdan Cretu, Wen Fang, Marc Aoulaiche, Jean-Marc Routoure, Regis Carin, Sara dos Santos, Jun Luo, Chao Zhao, Joao Antonio Martino, et al.

(2015) Physica Status Solidi C-Current Topics in Solid State Physics. 12(3). p.292-298

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Distinction between silicon and oxide traps using single-trap spectroscopy

Wen Fang, Eddy Simoen (UGent) , Marc Aoulaiche, Jun Luo, Chao Zhao and Cor Claeys

(2015) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 212(3). p.512-517

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Random telegraph noise: the key to single defect studies in nano-devices

Eddy Simoen (UGent) , W Fang, M Aoulaiche, J Luo, C Zhao and C Claeys

(2015) THIN SOLID FILMS. 613. p.2-5

Academic Bibliography

Ge-on-insulator fabrication based on Ge-on-nothing technology

Refined DC and low-frequency noise characterization at room and cryogenic temperatures of vertically stacked silicon nanosheet FETs

Exploration of gate trench module for vertical GaN devices

Low-frequency noise assessment of work function engineering cap layers in high-k gate stacks

Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors : physical interpretation of transport phenomena

Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on heteroepitaxial GeSn

Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs

Distinction between silicon and oxide traps using single-trap spectroscopy

Random telegraph noise: the key to single defect studies in nano-devices

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