Ghent University Academic Bibliography

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Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4563-4569
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Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.5949-5955
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P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

A. N. Tallarico, M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi and C. Fiegna

(2024) IEEE ELECTRON DEVICE LETTERS. 45(9). p.1630-1633
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Compact modeling of nonideal trapping/detrapping processes in GaN power devices

N. Modolo, C. De Santi, Giulio Baratella (UGent) , A. Bettini, M. Borga, N. Posthuma, Benoit Bakeroot (UGent) , S. You, S. Decoutere, A. Bevilacqua, et al.

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(8). p.4432-4437
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TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs

A. N. Tallarico, M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and C. Fiegna

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(2). p.507-513
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The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs

M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna and A. N. Tallarico

(2022) IEEE ELECTRON DEVICE LETTERS. 43(11). p.1846-1849
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Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

M. Millesimo, N. Posthuma, Benoit Bakeroot (UGent) , M. Borga, S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 21(1). p.57-63
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High-temperature time-dependent gate breakdown of p-GaN HEMTs

M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, Benoit Bakeroot (UGent) , S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(11). p.5701-5706
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Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs

Jie Wang, Zhanfei Chen, Shuzhen You, Wenyong Zhou, Benoit Bakeroot (UGent) , Jun Liu, Lingling Sun and Stefaan Decoutere

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(9). p.3564-3567

Academic Bibliography

Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

Compact modeling of nonideal trapping/detrapping processes in GaN power devices

TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs

The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs

Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

High-temperature time-dependent gate breakdown of p-GaN HEMTs

Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs

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