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TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
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The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs
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High-temperature time-dependent gate breakdown of p-GaN HEMTs
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Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs
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- Journal Article
- A1
- open access
LoRaWAN scheduling : from concept to implementation
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- Journal Article
- A1
- open access
Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs
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Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs
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Gate reliability of p-GaN HEMT with gate metal retraction
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Transverse domain wall based logic and memory concepts for all-magnetic computing
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Logic and memory concepts for all-magnetic computing based on transverse domain walls