Show
Sort by
-
Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors
-
- Journal Article
- A1
- open access
Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates
-
Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization
-
- Journal Article
- A1
- open access
Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots
-
Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS capacitors
-
Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots
-
Deep levels in silicon-oxygen superlattices
-
Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon
-
Analytical techniques for electrically active defect detection
-
Impact of the gate material on the deep levels in a-Si:H/c-Si metal-insulator-semiconductor capacitors
-
The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate
-
- Journal Article
- A1
- open access
Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications
-
On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors
-
- Journal Article
- A1
- open access
Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks