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Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors
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- Journal Article
- A1
- open access
Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates
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Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization
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- Journal Article
- A1
- open access
Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots
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Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS capacitors
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Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots
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Deep levels in silicon-oxygen superlattices
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Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon
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Analytical techniques for electrically active defect detection
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Impact of the gate material on the deep levels in a-Si:H/c-Si metal-insulator-semiconductor capacitors