Ghent University Academic Bibliography

Journal Article
A1
open access

P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

A. N. Tallarico, M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi and C. Fiegna

(2024) IEEE ELECTRON DEVICE LETTERS. 45(9). p.1630-1633

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Analysis of RTN induced by forward gate stress in GaN HEMTs with a Schottky p-GaN gate

M. Millesimo, C. Fiegna, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and A. N. Tallarico

(2024) 2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024. In International Reliability Physics Symposium

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Journal Article
A1
open access

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

Liad Tadmor, Enrico Brusaterra, Eldad Bahat Treidel, Frank Brunner, Nicole Bickel, Sofie Vandenbroucke (UGent) , Christophe Detavernier (UGent) , Joachim Würfl and Oliver Hilt

(2023) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 38(1).

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Gate reliability of p-GaN power HEMTs under pulsed stress condition

M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna and A. N. Tallarico

(2022) 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium p.10B.2-1-10B.2-6

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Journal Article
A1
open access

Electrothermal design of a discrete GaN-based converter for integrated modular motor drives

Abdalla Hussein Rashad Mohamed, Hendrik Vansompel (UGent) and Peter Sergeant (UGent)

(2021) IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS. 9(5). p.5390-5406

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State-of-the-art surface oxide semiconductors of liquid metals : an emerging platform for development of multifunctional two-dimensional materials

Mohamamd Karbalaei Akbari, Francis Verpoort (UGent) and Serge Zhuiykov (UGent)

(2021) JOURNAL OF MATERIALS CHEMISTRY A. 9(1). p.34-73

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Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

M. Millesimo, N. Posthuma, Benoit Bakeroot (UGent) , M. Borga, S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 21(1). p.57-63

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Journal Article
A1
open access

Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs

Jie Wang, Zhanfei Chen, Shuzhen You, Wenyong Zhou, Benoit Bakeroot (UGent) , Jun Liu, Lingling Sun and Stefaan Decoutere

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(9). p.3564-3567

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Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

Hongyue Wang, Po-Chun Hsu, Ming Zhao, Eddy Simoen (UGent) , Arturo Sibaja-Hernandez and Jinyan Wang

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(11). p.4827-4833

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Simulations of nanograting-assisted light coupling in GaN planar waveguide

R Dylewicz, RA Hogg, R Airey, R Paszkiewicz, Peter Bienstman (UGent) and S Patela

(2011) OPTICAL AND QUANTUM ELECTRONICS. 42(9-10). p.619-629

Academic Bibliography

P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

Analysis of RTN induced by forward gate stress in GaN HEMTs with a Schottky p-GaN gate

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

Gate reliability of p-GaN power HEMTs under pulsed stress condition

Electrothermal design of a discrete GaN-based converter for integrated modular motor drives

State-of-the-art surface oxide semiconductors of liquid metals : an emerging platform for development of multifunctional two-dimensional materials

Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs

Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

Simulations of nanograting-assisted light coupling in GaN planar waveguide

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