Ghent University Academic Bibliography

Journal Article
A1
open access

Optimization of non-alloyed backside ohmic contacts to N-face GaN for fully vertical GaN-on-silicon-based power devices

Youssef Hamdaoui (UGent) , Sofie Vandenbroucke (UGent) , Sondre Michler, Katir Ziouche, Matthias Minjauw (UGent) , Christophe Detavernier (UGent) and Farid Medjdoub

(2024) MICROMACHINES. 15(9).

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High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps

D. Favero, A. Cavaliere, C. De Santi, M. Borga, Walter Gonçalez Filho (UGent) , K. Geens, Benoit Bakeroot (UGent) , S. Decoutere, G. Meneghesso, E. Zanoni, et al.

(2023) 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS. In International reliability physics symposium

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Influence of drain and gate potential on gate failure in semi-vertical GaN-on-Si trench MOSFETs

D. Favero, C. De Santi, K. Mukherjee, K. Geens, M. Borga, Benoit Bakeroot (UGent) , S. You, S. Decoutere, G. Meneghesso, E. Zanoni, et al.

(2022) 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium

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Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

D. Favero, C. De Santi, K. Mukherjee, M. Borga, K. Geens, U. Chatterjee, Benoit Bakeroot (UGent) , S. Decoutere, F. Rampazzo, G. Meneghesso, et al.

(2022) MICROELECTRONICS RELIABILITY. 138.

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Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

TL Wu, J Franco, D Marcon, B De Jaeger, Benoit Bakeroot (UGent) , S Stoffels, M Van Hove, G Groeseneken and S Decoutere

(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(5). p.1853-1860

Academic Bibliography

Optimization of non-alloyed backside ohmic contacts to N-face GaN for fully vertical GaN-on-silicon-based power devices

High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps

Influence of drain and gate potential on gate failure in semi-vertical GaN-on-Si trench MOSFETs

Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

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