Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Download search results Subscribe to news feed Your filters: cql: keyword exact "Electric breakdown" Add to list Journal Article A1 open access P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime A. N. Tallarico, M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi and C. Fiegna (2024) IEEE ELECTRON DEVICE LETTERS. 45(9). p.1630-1633 Add to list Journal Article A1 Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs M. Millesimo, N. Posthuma, Benoit Bakeroot (UGent) , M. Borga, S. Decoutere and A. N. Tallarico (2021) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 21(1). p.57-63 Add to list Journal Article A1 open access High-temperature time-dependent gate breakdown of p-GaN HEMTs M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, Benoit Bakeroot (UGent) , S. Decoutere and A. N. Tallarico (2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(11). p.5701-5706 Add to list Journal Article A1 Gate reliability of p-GaN HEMT with gate metal retraction A. N. Tallarico, S. Stoffels, N. Posthuma, Benoit Bakeroot (UGent) , S. Decoutere, E. Sangiorgi and C. Fiegna (2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(11). p.4829-4835