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- Journal Article
- A1
- open access
Technology computer aided design based deep level transient spectra : simulation of high-purity germanium crystals
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A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
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- Journal Article
- A1
- open access
Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates
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Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra
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- Conference Paper
- P1
- open access
Insights into the reliability of Ni/Cu plated p-PERC silicon solar cells
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- Journal Article
- A1
- open access
Determination of majority carrier capture rates via deep level transient spectroscopy
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Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on heteroepitaxial GeSn
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- Journal Article
- A1
- open access
Electronic properties of manganese impurities in germanium
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Analytical techniques for electrically active defect detection
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Impact of the gate material on the deep levels in a-Si:H/c-Si metal-insulator-semiconductor capacitors