Ghent University Academic Bibliography

Journal Article
A1
open access

Impurity-enhanced solid-state amorphization : the Ni-Si thin film reaction altered by nitrogen

Koen van Stiphout, Filip Geenen (UGent) , Nuno M Santos, Sergio MC Miranda, Vincent Joly, J Demeulemeester, Christophe Detavernier (UGent) , Felipe Kremer, Lino MC Pereira, Kristiaan Temst, et al.

(2019) JOURNAL OF PHYSICS D-APPLIED PHYSICS. 52(14).

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Journal Article
A1
open access

Precise determination of polarization fields in c-plane GaN/Al x Ga1-x N/GaN heterostructures with capacitance--voltage-measurements

Norman Susilo, Marcel Schilling, Michael Narodovitch, Hsin-Hung Yao, Xiaohang Li, Bernd Witzigmann, Johannes Enslin, Martin Guttmann, Georgios Roumeliotis (UGent) , Monir Rychetsky, et al.

(2019) JAPANESE JOURNAL OF APPLIED PHYSICS. 58(C).

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Device performance as a metrology tool to detect metals in silicon

Cor Claeys and Eddy Simoen (UGent)

(2019) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 216(17).

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Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging

Po-Chun (Brent) Hsu, Han Han, Eddy Simoen (UGent) , Clement Merckling, Geert Eneman, Yves Mols, Nadine Collaert and Marc Heyns

(2019) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 216(17).

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Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors

Chong Wang (UGent) , Ming Zhao, Wei Li and Eddy Simoen (UGent)

(2019) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 216(17).

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The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors

Arno Stockman (UGent) , A. Tajalli, M. Meneghini, M. J. Uren, S. Mouhoubi, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, E. Zanoni, et al.

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(1). p.372-377

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Journal Article
A1
open access

Assessing stability of metal tellurides as alternative photomask materials for extreme ultraviolet lithography

Vu Luong, Vicky Philipsen, Karl Opsomer, Jens Rip, Eric Hendrickx, Marc Heyns, Christophe Detavernier (UGent) , Christian Laubis and Frank Scholze

(2019) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 37(6).

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Miscellaneous
open access

Wafer-scale fabrication of sub-10nm TiO2-Ga2O3 n-p heterojunctions with efficient photocatalytic activity by atomic layer deposition (vol 14, 163, 2019)

Hongyan Xu, Feng Han, Chengkai Xia, Siyan Wang, Ranjith Karuparambil Ramachandran (UGent) , Christophe Detavernier (UGent) , Minsong Wei, Liwei Lin and Serge Zhuiykov (UGent)

(2019) NANOSCALE RESEARCH LETTERS. 14.

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Selective electroless deposition of cobalt using amino-terminated SAMs

Ivan Zyulkov, Silvia Armini, Karl Opsomer, Christophe Detavernier (UGent) and Stefan De Gendt

(2019) JOURNAL OF MATERIALS CHEMISTRY C. 7(15). p.4392-4402

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Journal Article
A1
open access

Tomorrow’s micromagnetic simulations

Jonathan Leliaert (UGent) and Jeroen Mulkers (UGent)

(2019) JOURNAL OF APPLIED PHYSICS. 125(18).

Academic Bibliography

Impurity-enhanced solid-state amorphization : the Ni-Si thin film reaction altered by nitrogen

Precise determination of polarization fields in c-plane GaN/Al x Ga1-x N/GaN heterostructures with capacitance--voltage-measurements

Device performance as a metrology tool to detect metals in silicon

Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging

Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors

The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors

Assessing stability of metal tellurides as alternative photomask materials for extreme ultraviolet lithography

Wafer-scale fabrication of sub-10nm TiO2-Ga2O3 n-p heterojunctions with efficient photocatalytic activity by atomic layer deposition (vol 14, 163, 2019)

Selective electroless deposition of cobalt using amino-terminated SAMs

Tomorrow’s micromagnetic simulations

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