Ghent University Academic Bibliography

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Your filters: cql: issn exact "2151-2043"

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- Conference Paper
- C3
Atomic layer deposition of ruthenium dioxide thin films using RuO4 and alcohols as reactants

Nithin Poonkottil (UGent) , Matthias Minjauw (UGent) , Andreas Werbrouck (UGent) , Christophe Detavernier (UGent) and Jolien Dendooven (UGent)

(2021) ECS Meeting Abstracts. In ECS Meeting Abstracts MA2021-02. p.876-876
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- Conference Paper
- C3
Polymers wettability control through plasma surface engineering

Anton Nikiforov (UGent) , Chuanlong Ma (UGent) and Rino Morent (UGent)

(2021) MEETING ABSTRACTS (ELECTROCHEMICAL SOCIETY). MA2021-02. p.687-687
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- Conference Paper
- C3
Red fluoride phosphors : a story of reliability

Reinert Verstraete, Heleen Sijbom (UGent) , Jonas Joos (UGent) , Katleen Korthout (UGent) , Christophe Detavernier (UGent) , Philippe Smet (UGent) and Dirk Poelman (UGent)

(2018) ECS Meeting Abstracts.
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Microscopic study of dopant distribution in phosphors : impact on thermal quenching and phosphor performance

Lisa Martin (UGent) , Dirk Poelman (UGent) , Philippe Smet (UGent) and Jonas Joos (UGent)

(2018) ECS Meeting Abstracts.
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- Conference Paper
- C1
Ab initio analysis of point defects in plane-stressed Si or Ge crystals

Koji Sueoka, Piotr Spiewak and Jan Vanhellemont (UGent)

(2007) ECS Transactions. 11(3). p.375-391
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Comparative study of carrier lifetime variations with doping in Si and Ge

Eugenijus Gaubas and Jan Vanhellemont (UGent)

(2006) ECS Transactions. 3(4). p.339-350

Academic Bibliography

Atomic layer deposition of ruthenium dioxide thin films using RuO4 and alcohols as reactants

Polymers wettability control through plasma surface engineering

Red fluoride phosphors : a story of reliability

Microscopic study of dopant distribution in phosphors : impact on thermal quenching and phosphor performance

Ab initio analysis of point defects in plane-stressed Si or Ge crystals

Comparative study of carrier lifetime variations with doping in Si and Ge

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