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The optical and structural properties of InGaN epilayers with very high indium content.
(1999) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 59(1-3). p.292-297 -
Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers.
(1999) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 59(1-3). p.288-291 -
The optical linewidth of InGaN light emitting diodes.
(1997) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 50(1-3). p.285-288 -
Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon.
(1996) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 36(1-3). p.196-199 -
Oxygen related defects in germanium.
(1996) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 36(1-3). p.213-220 -
STRAIN EFFECTS ON CARRIER LIFETIMES IN INGAAS/(AL)GAAS MULTIPLE-QUANTUM WELLS.
(1993) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 21(2-3). p.253-256 -
RECENT DEVELOPMENTS IN RELAXED AND STRAINED LATTICE MISMATCHED HETEROSTRUCTURES
(1991) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 9(1-3). p.129-136