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- 2008
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Spectroscopy of metal related levels in Ge by transient infrared and microwave absorption techniques
(2008) MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. 154(Sp. Iss.). p.172-174 Mark
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Using rare earth doped thiosilicate phosphors in while light emitting LEDs: Towards low colour temperature and high colour rendering
(2008) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 146(1-3). p.264-268 Mark
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Electron paramagnetic resonance study of centres involved in storage processes in K2YF5: RE thermoluminescent phosphors
(2008) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 146(1-3). p.16-21 Mark
- 2005
- Structural properties of Ge-implanted SiO2 layers and related MOS memory effects
- 2003
- Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS
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Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon
(2003) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 102(1-3). p.207-212 Mark
- 2002
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Study of concentration variations in the metastable [CsCl]Fe1-xSi phase
(2002) Materials Science and Engineering B-Solid State Material for Advanced Technology. 89(1-3). p.386-389 Mark
- 2001
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The dependence of the optical energies on InGaN composition.
(2001) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 82(1-3). p.194-196 Mark
- 2000
- Quantitative optical variants of deep level transient spectroscopy: application to high purity germanium.
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Elastic strain in InGaN and AlGaN layers
(2000) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 75(2-3). p.232-235 Mark