1 – 10 of 17
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=""
width=""
height=""
allowtransparency="true"
frameborder="0">
</iframe>
- 2008
-
Spectroscopy of metal related levels in Ge by transient infrared and microwave absorption techniques
(2008) MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. 154(Sp. Iss.). p.172-174 Mark
-
Using rare earth doped thiosilicate phosphors in while light emitting LEDs: Towards low colour temperature and high colour rendering
(2008) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 146(1-3). p.264-268 Mark
-
Electron paramagnetic resonance study of centres involved in storage processes in K2YF5: RE thermoluminescent phosphors
(2008) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 146(1-3). p.16-21 Mark
- 2005
- Structural properties of Ge-implanted SiO2 layers and related MOS memory effects
- 2003
- Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS
-
Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon
(2003) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 102(1-3). p.207-212 Mark
- 2002
-
Study of concentration variations in the metastable [CsCl]Fe1-xSi phase
(2002) Materials Science and Engineering B-Solid State Material for Advanced Technology. 89(1-3). p.386-389 Mark
- 2001
-
The dependence of the optical energies on InGaN composition.
(2001) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 82(1-3). p.194-196 Mark
- 2000
-
Elastic strain in InGaN and AlGaN layers
(2000) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 75(2-3). p.232-235 Mark
- Quantitative optical variants of deep level transient spectroscopy: application to high purity germanium.