Ghent University Academic Bibliography

Journal Article
A1
open access

1200-V dual-gate p-GaN bidirectional switches on 200-mm engineered substrates

Giulio Baratella (UGent) , U. Chatterjee, S. Kumar, M. Borga, K. Geens, A. Vohra, S. Decoutere and Benoit Bakeroot (UGent)

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(12). p.6574-6579

Add to list

Journal Article
A1
open access

Effect of traps in Si/SiGe NPN selectors for cross-point memory array architecture

Sandipta Roy, Taras Ravsher, Bhuvaneshwari Yengula Venkata Ramana, Loris Angelo Labbate, Andrea Fantini, Roger Loo (UGent) , Nathali A. Franchina Vergel, Praveen Dara, Clément Porret, Nico Jossart, et al.

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(11). p.5995-6000

Add to list

Journal Article
A1
open access

Charge transport in GaN high electron mobility transistor with positive substrate bias

Peng Huang, Matthew D. Smith, Michael J. Uren, Zequan Chen, Benoit Bakeroot (UGent) , Anurag Vohra, Stefaan Decoutere and Martin Kuball

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(7). p.3483-3488

Add to list

Journal Article
A1
open access

Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs

Mojtaba Alaei (UGent) , Herbert De Pauw (UGent) , Elena Fabris, Stefaan Decoutere, Jan Doutreloigne (UGent) , Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(9). p.4817-4823

Add to list

Optimizing thin-film tandem solar cells : the impact of bandgap grading in ACIGS subcell on performance

Nour El I Boukortt (UGent) , Antonio Garcia Loureiro and Johan Lauwaert (UGent)

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(3). p.1197-1205

Add to list

Journal Article
A1
open access

Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Wei-Syuan Lin, Benoit Bakeroot (UGent) , Zhen-Hong Huang, Ting-Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere and Tian-Li Wu

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4874-4878

Add to list

Journal Article
A1
open access

Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4563-4569

Add to list

Journal Article
A1
open access

Refined analysis of the correlated carrier number and mobility fluctuations mechanism in MOSFETs

Bogdan Cretu, Abderrahim Tahiat, Anabela Veloso and Eddy Simoen (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.5860-5866

Add to list

Electrical stability of MOS structures with AlON and Al2O3 dielectrics deposited on n-and p-type GaN

Walter Gonçalez Filho (UGent) , Matteo Borga, Karen Geens, Md Arif Khan, Deepthi Cingu, Urmimala Chatterjee, Stefaan Decoutere, Werner Knaepen, Seda Kizir, Panagiota Arnou, et al.

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(9). p.5212-5217

Add to list

Journal Article
A1
open access

Monolithic 650-V dual-gate p-GaN bidirectional switch

Giulio Baratella (UGent) , U. Chatterjee, O. Syshchyk, M. Borga, E. Fabris, T. Cosnier, Benoit Bakeroot (UGent) and S. Decoutere

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(11). p.6904-6909

Academic Bibliography

1200-V dual-gate p-GaN bidirectional switches on 200-mm engineered substrates

Effect of traps in Si/SiGe NPN selectors for cross-point memory array architecture

Charge transport in GaN high electron mobility transistor with positive substrate bias

Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs

Optimizing thin-film tandem solar cells : the impact of bandgap grading in ACIGS subcell on performance

Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Refined analysis of the correlated carrier number and mobility fluctuations mechanism in MOSFETs

Electrical stability of MOS structures with AlON and Al2O3 dielectrics deposited on n-and p-type GaN

Monolithic 650-V dual-gate p-GaN bidirectional switch

Contents

Support

Contact