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Analysis of Leakage Mechanisms in AlN Nucleation Layers on p-Si and p-SOI Substrates
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Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise Behavior
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The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors
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Influence of GaN- and Si3N4-passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
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Investigation on carrier transport through AIN nucleation layer from differently doped Si(111) substrates
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Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors
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Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors
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Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination
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Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination
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Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs