Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Download search results Subscribe to news feed Your filters: cql: author exact F57CF242-F0ED-11E1-A9DE-61C894A0A6B4 or (type any "bookEditor issueEditor" and edito... cql: keyword exact "impact" Add to list Journal Article A1 open access Role of the GaN-on-Si epi-stack on Ξ”RON caused by back-gating stress M. Millesimo, M. Borga, L. Valentini, Benoit Bakeroot (UGent) , N. Posthuma, A. Vohra, S. Decoutere, C. Fiegna and A. N. Tallarico (2023) IEEE TRANSACTIONS ON ELECTRON DEVICES. 70(10). p.5203-5209 Add to list Journal Article A1 High-temperature time-dependent gate breakdown of p-GaN HEMTs M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, Benoit Bakeroot (UGent) , S. Decoutere and A. N. Tallarico (2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(11). p.5701-5706 Add to list Journal Article A1 Gate reliability of p-GaN HEMT with gate metal retraction A. N. Tallarico, S. Stoffels, N. Posthuma, Benoit Bakeroot (UGent) , S. Decoutere, E. Sangiorgi and C. Fiegna (2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(11). p.4829-4835 Add to list Journal Article A1 Investigation of constant voltage off-state stress on au-free AlGaN/GaN Schottky Barrier diodes Jie Hu, Steve Stoffels, Silvia Lenci, Tian-Li Wu, Nicolo Ronchi, Shuzhen You, Benoit Bakeroot (UGent) , Guido Groeseneken and Stefaan Decoutere (2015) JAPANESE JOURNAL OF APPLIED PHYSICS. 54(7). Add to list Journal Article A1 open access Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot (UGent) , Guido Groeseneken and Stefaan Decoutere (2014) MICROELECTRONICS RELIABILITY. 54(9-10). p.2196-2199