Ghent University Academic Bibliography

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High-contrast quantum-confined Stark effect in Ge/SiGe quantum well stacks on Si with ultra-thin buffer layers

Srinivasan Ashwyn Srinivasan (UGent) , C Porret, E Vissers, Pieter Geiregat (UGent) , Dries Van Thourhout (UGent) , R Loo, M Pantouvaki and J Van Campenhout

(2018) CLEO Pacific Rim 2018, Proceedings.
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Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si

Srinivasan Ashwyn Srinivasan (UGent) , C. Porret, M. Pantouvaki, Y. Shimura, Pieter Geiregat (UGent) , R. Loo, J. Van Campenhout and Dries Van Thourhout (UGent)

(2018) APPLIED PHYSICS LETTERS. 113(16). p.1-5
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Reduction of optical bleaching in phosphorus doped ge layer on si

Srinivasan Ashwyn Srinivasan (UGent) , C. Porret, M. Pantouvaki, Y. Shimura, Pieter Geiregat (UGent) , R. Loo, J. Van Campenhout and Dries Van Thourhout (UGent)

(2017) 2017 IEEE 14TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP). In IEEE International Conference on Group IV Photonics p.53-54
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Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application

Srinivasan Ashwyn Srinivasan (UGent) , C. Porret, M. Pantouvaki, Y. Shimura, Pieter Geiregat (UGent) , R. Loo, J. Van Campenhout and Dries Van Thourhout (UGent)

(2017) 30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC). In IEEE Photonics Conference p.311-312
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Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence

Yosuke Shimura, Srinivasan Ashwyn Srinivasan (UGent) , Dries Van Thourhout (UGent) , Rik Van Deun (UGent) , Marianna Pantouvaki, Joris Van Campenhout and Roger Loo

(2016) THIN SOLID FILMS. 602. p.56-59
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High-speed germanium-based waveguide electro-absorption modulator

P. De Heyn, Srinivasan Ashwyn Srinivasan (UGent) , P. Verheyen, R. Loo, I. De Wolf, S. Balakrishnan, G. Lepage, Dries Van Thourhout (UGent) , M. Pantouvaki, P. Absil, et al.

(2016) 2016 21ST OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) HELD JOINTLY WITH 2016 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING (PS).
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Extraction of carrier lifetime in Ge waveguides using pump probe spectroscopy

Srinivasan Ashwyn Srinivasan (UGent) , M Pantouvaki, P Verheyen, G Lepage, P Absil, J Van Campenhout and Dries Van Thourhout (UGent)

(2016) APPLIED PHYSICS LETTERS. 108(21).
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56 Gb/s Germanium waveguide electro-absorption modulator

Srinivasan Ashwyn Srinivasan (UGent) , Marianna Pantouvaki, Shashank Gupta, Hongtao Chen (UGent) , Peter Verheyen, Guy Lepage, Günther Roelkens (UGent) , Krishna Saraswat, Dries Van Thourhout (UGent) , Philippe Absil, et al.

(2016) JOURNAL OF LIGHTWAVE TECHNOLOGY. 34(2). p.419-424
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Low temperature in-situ P-doped Ge epitaxy using Ge2H6 in view of optical applications

Yosuke Shimura, Srinivasan Ashwyn Srinivasan (UGent) , Dries Van Thourhout (UGent) , Rik Van Deun (UGent) , Marianna Pantouvaki, Joris Van Campenhout and Roger Loo

(2015) 9th International conference on silicon epitaxy and heterostructures. p.91-92
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50GHz Ge waveguide electro-absorption modulator integrated in a 220nm SOI photonics platform

S Gupta, Srinivasan Ashwyn Srinivasan (UGent) , M Pantouvaki, Hongtao Chen (UGent) , P Verheyen, G Lepage, Dries Van Thourhout (UGent) , Günther Roelkens (UGent) , K Saraswat, P Absil, et al.

(2015) 2015 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC).

Academic Bibliography

High-contrast quantum-confined Stark effect in Ge/SiGe quantum well stacks on Si with ultra-thin buffer layers

Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si

Reduction of optical bleaching in phosphorus doped ge layer on si

Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application

Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence

High-speed germanium-based waveguide electro-absorption modulator

Extraction of carrier lifetime in Ge waveguides using pump probe spectroscopy

56 Gb/s Germanium waveguide electro-absorption modulator

Low temperature in-situ P-doped Ge epitaxy using Ge2H6 in view of optical applications

50GHz Ge waveguide electro-absorption modulator integrated in a 220nm SOI photonics platform

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